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Air oxidation of undoped and B-doped polycrystalline diamond films at high temperature

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Abstract

Air oxidation of undoped and B-doped polycrystalline diamond films was investigated at temperatures between 500 and 700 °C. Diamond (111) facets were etched for both undoped and B-doped films after 1 h at 700 °C. The etching rate of (111) facet due to oxidation was approximately 50% lower by B-doping of 1 × 1019 cm−3, presumably because of the decrease of sp 2 bands and lattice defects that were identified by Raman and photoluminescence spectroscopy. X-ray photoelectron and electron energy loss spectroscopy revealed that by the high temperature treatment, the diamond surface was initially converted into graphite and successively etched by oxygen.

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Authors and Affiliations

  1. Kobe Steel, Ltd., Electronics Research Laboratory, 1-5-5 Takatsuka-dai, Nishi-ku, Kobe, 651-22, Japan

    Koichi Miyata & Koji Kobashi

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  1. Koichi Miyata
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  2. Koji Kobashi
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Miyata, K., Kobashi, K. Air oxidation of undoped and B-doped polycrystalline diamond films at high temperature. Journal of Materials Research 11, 296–304 (1996). https://doi.org/10.1557/JMR.1996.0035

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  • DOI: https://doi.org/10.1557/JMR.1996.0035

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