Skip to main content
SpringerLink
Log in

Doping and crystallization of amorphous SiGe films with an excimer (KrF) laser

  • Articles
  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

Amorphous silicon germanium (a-SiGe) films, deposited on silicon substrates at room temperature in a molecular beam epitaxy system, were transformed into a single-crystal film and doped with phosphorus by exposure to KrF laser pulses. Electron channeling patterns showed that laser exposure resulted in crystallization of the undoped a-SiGe films. The SiGe films were doped by laser irradiation, using a phosphorus spin-on-dopant. The sheet resistance of the doped films decreased with increasing numbers of pulses, reaching a value of about ∼ 5 × 104 ohms/□ after 15 pulses. I-V data from mesa-type n-SiGe/p-Si diode devices were used to determine the effect of laser processing on the quality of the SiGe films.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. S. Iyer, G.L. Patton, J.C. Stork, Β. S. Meyerson, and D.L. Harame, IEEE Trans. Electron. Devices 36, 2043 (1989).

    Article  CAS  Google Scholar 

  2. R. People, IEEE J. Quantum Electronics QE-22, 1696 (1986).

    Article  Google Scholar 

  3. T.J. King, K. C. Saraswat, and J. R. Pñester, IEEE Electron. Device Lett. EDL-12, 584 (1991).

    Article  Google Scholar 

  4. I.W. Wu, A. Chiang, M. Fuse, L. Ovecuglu, and T. Y. Huang, J. Appl. Phys. 65, 4036 (1989).

    Article  CAS  Google Scholar 

  5. P. G. Carey, T.W. Sigmon, R.L. Press, and T. S. Fahlen, IEEE Electron Device Lett. EDL-6, 291 (1985).

    Article  Google Scholar 

  6. J. Narayan, R. T. Young, R. F. Wood, and W. H. Christie, Appl. Phys. Lett. 33, 338 (1978).

    Article  CAS  Google Scholar 

  7. G. Β. Turner, D. Tarrant, G. Pollock, R. Presley, and R. Press, Appl. Phys. Lett. 39, 967 (1981).

    Article  CAS  Google Scholar 

  8. R. Z. Bachrach, K. Winer, J. B. Boyce, S. E. Ready, R. I. Johnson, and G. B. Anderson, J. Electron. Mater. 19, 241 (1990).

    Article  CAS  Google Scholar 

  9. F. Foulan, E. Fogarassy, A. Slaoui, C. Fuchs, S. Unamuno, and P. Siffert, Appl. Phys. A45, 361 (1988).

    Article  Google Scholar 

  10. S. Kato, H. Saeki, J. Wada, and S. Matsumoto, J. Electrochem. Soc. Solid State Sci. Technol. 135, 1030 (1988).

    CAS  Google Scholar 

  11. T. F. Deutsh, D.J. Ehrilch, D.D. Rathman, D.J. Silversmith, and R.M. Osgood, Appl. Phys. Lett. 39, 825 (1981).

    Article  Google Scholar 

  12. A. Gat, L. Gerzberg, J. F. Gibbons, T. J. Magee, J. Peng, and J. D. Hong, Appl. Phys. Lett. 33, 775 (1978).

    Article  CAS  Google Scholar 

  13. J. Narayan, C. W. White, M. J. Aziz, Β. Stritzker, and A. Walthuis, J. Appl. Phys. 57, 564 (1985).

    Article  CAS  Google Scholar 

  14. J. Narayan and C.W. White, Appl. Phys. Lett. 44, 35 (1984).

    Article  CAS  Google Scholar 

  15. J. Narayan, C.W. White, O.W. Holland, and M.J. Aziz, J. Appl. Phys. 56, 1821 (1984).

    Article  CAS  Google Scholar 

  16. D. C. Joy, D. E. Newbury, and D. L. Davidson, J. Appl. Phys. 53, R81 (1982).

    Article  CAS  Google Scholar 

  17. G. K. Chang, T. K. Cams, S. S. Rhee, and K. L. Wang, J. Electro-Chem. Soc. 138, 202 (1991).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Chemical Engineerng, Center for Advanced Materials Processing, Clarkson University, Potsdam, 13699, New York, USA

    S. Krishnan & S. V. Babu

  2. Ultra Clean Technology, Menlo Park, 94025, California, USA

    S. Krishnan

  3. CHEMI Laboratories, Watervliet, 12189, New York, USA

    M. I. Chaudhry

Authors
  1. S. Krishnan
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. I. Chaudhry
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. V. Babu
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Krishnan, S., Chaudhry, M.I. & Babu, S.V. Doping and crystallization of amorphous SiGe films with an excimer (KrF) laser. Journal of Materials Research 10, 1884–1888 (1995). https://doi.org/10.1557/JMR.1995.1884

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/JMR.1995.1884

Search

Navigation