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Variant structure in metal-organic-chemical-vapor-deposition-derived SnO2 thin films on sapphire (0001)

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Abstract

Tin oxide (SnO2) thin films were deposited on sapphire (0001) substrate by metal-organic chemical vapor deposition (MOCVD) at temperatures of 600 and 700 °C. The microstructure of the deposited films was characterized by x-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). At the growth conditions studied, films were single-phase rutile and epitaxial, but showed variant structures. Three distinct in-plane epitaxial relationships were observed between the films and the substrate. A crystallographic model is proposed to explain the film morphology. This model can successfully predict the ratio of the width to the length of an averaged grain size based upon the lattice mismatch of the film-substrate interface.

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References

  1. E.G. Bauer, B.W. Dodson, D.J. Ehrlich, L.C. Feldman, C.P. Flynn, M.W. Geis, J. P. Harbison, R.J. Matyi, P. S. Peercy, P.M. Petroff, J.M. Phillips, G.B. Stringfellow, and A. Zangwill, J. Mater. Res. 5, 852 (1990).

    Article  CAS  Google Scholar 

  2. D.C. Bertolet, J.K. Hsu, and K.M. Lau, J. Appl. Phys. 62, 120 (1987).

    Article  CAS  Google Scholar 

  3. H. Kawai, K. Kaneko, and N. Watanabe, J. Appl. Phys. 56, 463 (1984).

    Article  CAS  Google Scholar 

  4. S. Sinharoy, H. Buhay, D.R. Lampe, and M. F. Francombe, J. Vac. Sci. Technol. A 10, 1554 (1992).

    Article  CAS  Google Scholar 

  5. B. M. Kulwicki, A. Amin, H. R. Beratan, and C. M. Hanson, IEEE 7th Int. Symp. Appl. Ferroelectrics (1992), p. 1.

  6. D.L. Polla, IEEE 7th Int. Symp. Appl. Ferroelectrics (1992), p. 127.

  7. C. Tatsuyama and S. Ichimura, Jpn. J. Appl. Phys. 15, 843 (1976).

    Article  CAS  Google Scholar 

  8. A. Aoki and H. Sasakura, Jpn. J. Appl. Phys. 9, 582 (1970).

    Article  CAS  Google Scholar 

  9. A. Atkison and P.T. Moseley, Appl. Surf. Sci. 65/66, 212 (1993).

    Article  Google Scholar 

  10. M.J. Madou and S.R. Morrison, Chemical Sensing with Solid-State Devices (Academic Press, San Diego, CA, 1989), Chap. 10, p. 424.

    Google Scholar 

  11. H.L.M. Chang, H. You, Y. Gao, J. Guo, C.M. Foster, R.P. Chiarello, T.J. Zhang, and D.J. Lam, J. Mater. Res. 7, 2495 (1992).

    Article  CAS  Google Scholar 

  12. H.L.M. Chang, T.J. Zhang, H. Zhang, J. Guo, H.K. Kim, and D.J. Lam, J. Mater. Res. 8, 2634 (1993).

    Article  CAS  Google Scholar 

  13. W. E. Lee and K. P. D. Lagerlof, J. Electron Microscopy Tech. 2, 247 (1985).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana, 61801, Illinois, USA

    Donhang Liu & Haydn Chen

  2. Materials Science Division, Argonne National Laboratory, Argonne, 60439, Illinois, USA

    Q. Wang & H.L.M. Chang

Authors
  1. Donhang Liu
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  2. Q. Wang
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  3. H.L.M. Chang
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  4. Haydn Chen
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Liu, D., Wang, Q., Chang, H. et al. Variant structure in metal-organic-chemical-vapor-deposition-derived SnO2 thin films on sapphire (0001). Journal of Materials Research 10, 1516–1522 (1995). https://doi.org/10.1557/JMR.1995.1516

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  • DOI: https://doi.org/10.1557/JMR.1995.1516

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