Abstract
We have reported here on low-temperature Raman scattering measurements on thin films of hydrogenated amorphous silicon (α-Si:H) alloys having different H contents. The Stoke’s intensity, 77KITO, scattered at 77 K by the TO-phonon is found to be several times greater than its corresponding magnitude (300KITO) at 300 K. The ratio (77KITO/300KITO) is observed to vary exponentially with an increase in H concentration of the film. After eliminating various possible contributions to the scattering cross section, and therefore to the scattered intensity, this anomalous light scattering at 77 K is attributed to the possibility of polarizability modulation, which is believed to be caused due to a possible reduction in light-induced migration of H in α-Si:H and to the charge-carrier-induced enhancement of electron phonon coupling at 77 K.
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Bhusari, D.M., Kumbhar, A. & Kshirsagar, S.T. Anomalous low-temperature Raman scattering in a–Si1−xHx. Journal of Materials Research 10, 1362–1370 (1995). https://doi.org/10.1557/JMR.1995.1362
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DOI: https://doi.org/10.1557/JMR.1995.1362