Skip to main content
SpringerLink
Log in

Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy

  • Articles
  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

The microstructures of GaN films, grown on (001) and (111) Si substrates by a two-step method using Electron Cyclotron Resonance assisted-Molecular Beam Epitaxy (ECR-MBE), were studied by electron microscopy techniques. Films grown on (001) Si had a predominantly zinc-blende structure. The GaN buffer layer, grown in the first deposition step, accommodated the 17% lattice mismatch between the film and substrate by a combination of misoriented domains and misfit dislocations. Beyond the buffer layer, the film consisted of highly oriented domains separated by inversion domain boundaries, with a substantial decrease in the defect density away from the interface. The majority of defects in the film were stacking faults, microtwins, and localized regions having the wurtzite structure. The structure of the GaN films grown on (111) Si was found to be primarily wurtzite, with a substantial fraction of twinned zinc-blende phase. Occasional wurtzite grains, misoriented by a 30°twist along the [0001] axis, were also observed. A substantial diffusion of Si was seen in films grown on both substrates.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. R.F. Davis, Proc. IEEE 79, 702 (1991).

    Article  CAS  Google Scholar 

  2. H. P. Maruska and J. J. Tietjen, Appl. Phys. Lett. 15, 327 (1969).

    Article  CAS  Google Scholar 

  3. H. M. Manasevit, F. M. Erdmann, and W. I. Simpson, J. Elec-trochem. Soc. 118, 1864 (1971).

    Article  CAS  Google Scholar 

  4. T.D. Moustakas, T. Lei, and R.J. Molnar, Physica B 185, 36 (1993).

    Article  CAS  Google Scholar 

  5. J. S. Harris, Jr., S. M. Koch, and S. J. Rosner, in Heteroepitaxy on Silicon II, edited by J. C. C. Fan, J. M. Phillips, and B-Y. Tsaur (Mater. Res. Soc. Symp. Proc. 91, Pittsburgh, PA, 1987), p. 3.

  6. J. I. Pankove, in Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by J. T. Glass, R. Messier, and N. Fujimori (Mater. Res. Soc. Symp. Proc. 162, Pittsburgh, PA, 1990), p. 515.

  7. M. J. Paisley, Z. Sitar, J. B. Posthill, and R. F. Davis, J. Vac. Sci. Technol. A 7, 701 (1989).

    Article  CAS  Google Scholar 

  8. R. C. Powell, G. A. Tomasch, Y. W. Kim, J. A. Thorton, and J. E. Greene, in Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by J. T. Glass, R. Messier, and N. Fujimori (Mater. Res. Soc. Symp. Proc. 162, Pittsburgh, PA, 1990), p. 525.

  9. S. Strife, J. Ruan, Z. Li, A. Salvador, H. Chen, D. J. Smith, W. J. Choyke, and H. Morkoç, J. Vac. Sci. Technol. B 9 (4), 1924 (1991).

    Article  Google Scholar 

  10. T. Lei, T. D. Moustakas, R. J. Graham, Y. He, and S. J. Berkowitz, J. Appl. Phys. 71 (10), 4933 (1992).

    Article  CAS  Google Scholar 

  11. Z. Sitar, M.J. Paisley, B. Yan, and R. F. Davis, in Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by J.T. Glass, R. Messier, and N. Fujimori (Mater. Res. Soc. Symp. Proc. 162, Pittsburgh, PA, 1990), p. 537.

  12. T. Lei, K.F. Ludwig, and T.D. Moustakas, J. Appl. Phys. 74 (7), 4430 (1993).

    Article  CAS  Google Scholar 

  13. T. E. Mitchell, P. Pirouz, and A. H. Heuer, Microbeam Analysis, edited by R. H. Geiss (San Francisco Press, San Francisco, CA, 1987), p. 215.

    Google Scholar 

  14. A. Georgakilas, J. Stoemenos, K. Tsagaraki, Ph. Komninou, N. Flevaris, P. Panayotatos, and A. Christou, J. Mater. Res. 8, 1908 (1993).

    Article  CAS  Google Scholar 

  15. R. F. Davis, J. W. Palmour, and J. A. Edmond, in Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by J. T. Glass, R. Messier, and N. Fujimori (Mater. Res. Soc. Symp. Proc. 162, Pittsburgh, PA, 1990), p. 463.

  16. P. Pirouz and Y. Yang, in High Resolution Electron Microscopy of Defects in Materials, edited by R. Sinclair, D. J. Smith, and U. Dahmen (Mater. Res. Soc. Symp. Proc. 183, Pittsburgh, PA, 1990), p. 173.

  17. T. Lei and T. D. Moustakas, in Wide Band Gap Semiconductors, edited by T. D. Moustakas, J. I. Pankove, and Y. Hamakawa (Mater. Res. Soc. Symp. Proc. 242, Pittsburgh, PA, 1992), p. 433.

  18. S. Strite, D. Chandrasekhar, D.J. Smith, J. Sariel, H. Chen, N. Teraguchi, and H. Morkoç, J. Cryst. Growth 127, 204 (1993).

    Article  CAS  Google Scholar 

  19. L.U. Ogbuji, T.E. Mitchell, A.H. Heuer, and S. Shinozaki, J. Am. Ceram. Soc. 64 (2), 100 (1981).

    Article  CAS  Google Scholar 

  20. K.H. Lee, D.A. Stevenson, and M.D. Deal, J. Appl. Phys. 68 (8), 4008 (1990).

    Article  CAS  Google Scholar 

  21. J.E. Greene, J. Vac. Sci. Technol. B 1 (2), 229 (1993).

    Article  Google Scholar 

  22. M. Fanciulli, T. Lei, and T.D. Moustakas, Phys. Rev. B 48 (20), 1993.

  23. T. Lei and T. D. Moustakas, unpublished research.

  24. H.S. Hong, B.L. Jiang, J.T. Glass, G.A. Rozgonyi, and K.L. More, J. Appl. Phys. 63 (8), 2645 (1988).

    Article  Google Scholar 

  25. S. N. Basu, K. Das Chowdhury, and T. D. Moustakas, unpublished research.

  26. R.W. Balluffi, A. Brokman, and A.H. King, Acta Metall. 30, 1453 (1982).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Manufacturing Engineering, Boston University, Boston, Massachusetts, 02215, USA

    S. N. Basu

  2. Molecular Beam Epitaxy Laboratory, Department of Electrical Engineering, Boston University, Boston, Massachusetts, 02215, USA

    T. Lei & T. D. Moustakas

Authors
  1. S. N. Basu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. T. Lei
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. T. D. Moustakas
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Basu, S.N., Lei, T. & Moustakas, T.D. Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy. Journal of Materials Research 9, 2370–2378 (1994). https://doi.org/10.1557/JMR.1994.2370

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/JMR.1994.2370

Search

Navigation