Abstract
Thin epitaxial films of β-SiC were grown by CVD on (100), (111), and (112) TiC substrates. TEM observations of the resulting interfaces revealed that island nucleation prevailed in the early stages of deposition for all three substrate orientations. Films grown on (111) and (112) TiC were monocrystalline, while SiC films deposited on (100) substrates were polycrystalline and not epitaxial, a phenomenon attributed to the poor match of atomic positions in SiC and TiC on their respective (100) planes. The (111) interface was abrupt and atomically flat, while the (112) interface exhibited {111} facets and steps. Simulated images of the stable (111) interface were calculated based on several possible atomic configurations, and the atomic structure of the interface was deduced from comparisons between the simulated images and phase-contrast TEM images.
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References
J. A. Powell and L. G. Matus, in Amorphous and Crystalline Silicon Carbide, edited by G. L. Harris and C. Y-W. Yang (Springer Proceedings in Physics 34, 1989), p. 2.
P. Pirouz, in Poly crystalline Semiconductors, edited by J. H. Werner, H. J. Moller, and H. P. Strunk (Springer Proceedings in Physics 35, 1989), p. 200.
H.S. Kong, B.L. Jiang, J.T. Glass, G.A. Rozgonyi, and K.L. More, J. Appl. Phys. 63 (8), 2645 (1988).
Y. C. Wang, H. S. Kong, J. T. Glass, R. F. Davis, and K. L. More, J. Am. Ceram. Soc. 73 (5), 1289 (1990).
J.D. Parsons, R.F. Bunshah, and O.M. Stafsudd, Solid State Tech. 11, 133 (1985).
F.R. Chien, S.R. Nutt, N. Buchan, J.M. Carulli, C.P. Beetz, W. S. Yoo, and D. Cummings, in Evolution of Surf ace and Thin Film Microstructure, edited by H. A. Atwater, E. H. Chason, M. L. Grabow, and M. G. Lagally (Mater. Res. Soc. Symp. Proc. 280, Pittsburgh, PA, 1993), p. 733.
J. D. Parsons, R. F. Bunshah, and O. M. Stafsudd, J. Electrochem. Soc. 140, 1756 (1993).
P. Pirouz and J. Yang, in High Resolution Electron Microscopy of Defects in Materials, edited by R. Sinclair, D.J. Smith, and U. Dahmen (Mater. Res. Soc. Symp. Proc. 183, Pittsburgh, PA, 1990), p. 173.
W. R. L. Lambrecht and B. Segall, Acta Metall. Mater. 40, Suppl. S17 (1992).
C. Herring, in Structure and Properties of Solid Surfaces, edited by R. Gomer (University of Chicago Press, 1953), Chap. 1.
C. Oshima, M. Aono, S. Zaima, Y. Shibata, and S. Kawai, J. Less-Comm. Met. 82, 69 (1981).
S. Zaima, Y. Shibata, H. Adachi, C. Oshima, S. Otani, M. Anoto, and Y. Ishizawa, Surf. Sci. 157, 380 (1985).
J.H. Weaver, A.M. Bradshaw, J.F. van der Veen, F.J. Himpsel, D. E. Eastman, and C. Politis, Phys. Rev. B 22, 4921 (1980).
F. R. Chien, A. F. Schwartzman, and S. R. Nutt, unpublished.
F. R. Chien, S. R. Nutt, and D. Cummings, Philos. Mag. A 68, 325 (1993).
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Chien, F.R., Nutt, S.R., Carulli, J.M. et al. Heteroepitaxial growth of β’-SiC films on TiC substrates: Interface structures and defects. Journal of Materials Research 9, 2086–2095 (1994). https://doi.org/10.1557/JMR.1994.2086
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DOI: https://doi.org/10.1557/JMR.1994.2086