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Preparation of MoS2 thin films by chemical vapor deposition

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Abstract

The chemical vapor deposition (CVD) of MoS2 by reaction of H2S with molybdenum halides was determined to be thermodynamically favored over a wide range of temperature, pressure, and precursor concentration conditions as long as excess H2S was available. The thermochemical stability of H2S, MoF6, and MoCI5 was also assessed to address their suitability as precursors for the CVD of MoS2. The results from the thermodynamic analysis were used as guidance in the deposition of MoS2 thin films from MoF6 and H2S. The (002) basal planes of MoS2 films deposited above 700 K were preferentially oriented perpendicular to the substrate surface.

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Authors and Affiliations

  1. Oak Ridge National Laboratory, Tennessee, 37831-6063, Oak Ridge, USA

    Woo Y. Lee, Theodore M. Besmann & Michael W. Stott

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  1. Woo Y. Lee
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  2. Theodore M. Besmann
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  3. Michael W. Stott
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Lee, W.Y., Besmann, T.M. & Stott, M.W. Preparation of MoS2 thin films by chemical vapor deposition. Journal of Materials Research 9, 1474–1483 (1994). https://doi.org/10.1557/JMR.1994.1474

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  • DOI: https://doi.org/10.1557/JMR.1994.1474

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