Abstract
This work describes the formation of stoichiometric AlN films by single ion-beam sputtering of Al, using an ionized N2 (75%) + H2 (25%) mixture, onto substrates heated to 200 °C or above. The role of substrate temperature on film composition and properties is followed in the substrate temperature range between ambient and 250 °C. Infrared spectra of freshly prepared and 2 month old (aged in air) films demonstrate that substrate heating significantly affects the chemical nature of the resulting films. SEM and STM data, combined with IR and UV-visible spectral results, indicate that films formed at a substrate temperature of ≥200 °C are very smooth and highly resistant to attack by atmospheric gases. X-ray diffraction data show no diffraction peaks, indicating that the film is either amorphous or crystalline on a scale of less than 4 nm.
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Wang, XD., Hipps, K.W., Dickinso, J.T. et al. Amorphous or nanocrystalline AlN thin films formed from AlN: H. Journal of Materials Research 9, 1449–1455 (1994). https://doi.org/10.1557/JMR.1994.1449
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DOI: https://doi.org/10.1557/JMR.1994.1449