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Single molecular precursor metal-organic chemical vapor deposition of MgAl2O4 thin films

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Abstract

MgAl2O4 films have been grown epitaxially on both Si(100) and MgO(100) by a novel single source metal-organic chemical vapor deposition (MOCVD) process. A single molecular source reagent [magnesium dialuminum isopropoxide, MgAl2(OC3H7)8] having the desired Mg: Al ratio was dissolved in a liquid solution and flash-vaporized into the reactor. Both thermal and plasma-enhanced MOCVD were used to grow epitaxial MgAl2O4 thin films. The Mg: Al ratio in the deposited films was the same as that of the starting compound (Mg: Al = 1:2) over a wide range of deposition conditions. The deposition temperature required for the formation of crystalline spinel was found to be significantly reduced and crystallinity was much improved on Si by using a remote plasma-enhanced MOCVD process. The epitaxial nature of the MgAl2O4 films was established by x-ray pole figure analysis.

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Authors and Affiliations

  1. Advanced Technology Materials, Inc., Connecticut, 06810, Danbury, USA

    Jiming Zhang, Gregory T. Stauf, Robin Gardiner, Peter Van Buskirk & John Steinbeck

Authors
  1. Jiming Zhang
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  2. Gregory T. Stauf
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  3. Robin Gardiner
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  4. Peter Van Buskirk
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  5. John Steinbeck
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Zhang, J., Stauf, G.T., Gardiner, R. et al. Single molecular precursor metal-organic chemical vapor deposition of MgAl2O4 thin films. Journal of Materials Research 9, 1333–1336 (1994). https://doi.org/10.1557/JMR.1994.1333

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  • DOI: https://doi.org/10.1557/JMR.1994.1333

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