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Preparation and growth mechanism of a-axis-oriented YBa2Cu3O7-δ films by laser metal-organic chemical vapor deposition

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Abstract

Recently we have found a very effective method for controlling the orientation of YBCO films by metal-organic chemical vapor deposition (MOCVD) using uv laser irradiation during deposition onto a MgO(100) substrate. The irradiated part was strongly a-axis-oriented normal to the surface of the substrate for films prepared at 650-700 °C, whereas the unirradiated parts showed c-axis or (110) orientation. This phenomenon occurs not only on MgO(100) substrates but also on other substrates. We obtained a Tc above 81 K on the a-axis oriented part. The critical current density was over 105 A/cm2 at 4.2 K and O T. The surface morphology depends on the laser power density and the repetition rate. A high degree of the a-axis orientation is obtained only by using uv light during deposition of YBCO film. IR or a visible laser causes only surface melting and the destruction of film orientation. We propose that the nuclei for a-axis orientation are formed by the aggregation of Ba caused by uv laser irradiation near the film surface.

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Authors and Affiliations

  1. Superconductivity Research Laboratory, Nagoya Division, International Superconductivity Technology Center, Nagoya, 2-4-1 Mutsuno, 456, Atsuta-ku, Japan

    Takahisa Ushida, Hiroyuki Higa, Kazutoshi Higashiyama & Izumi Hirabayashi

Authors
  1. Takahisa Ushida
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  2. Hiroyuki Higa
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  3. Kazutoshi Higashiyama
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  4. Izumi Hirabayashi
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Ushida, T., Higa, H., Higashiyama, K. et al. Preparation and growth mechanism of a-axis-oriented YBa2Cu3O7-δ films by laser metal-organic chemical vapor deposition. Journal of Materials Research 9, 1067–1081 (1994). https://doi.org/10.1557/JMR.1994.1067

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  • DOI: https://doi.org/10.1557/JMR.1994.1067

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