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Amorphization phenomenon in Ni/amorphous Si multilayers

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Abstract

Interfacial reactions of Ni/amorphous Si(a-Si) multilayers are studied by means of transmission electron microscopy (TEM) and cross-sectional transmission electron microscopy (XTEM). Transformation from a crystalline to an amorphous structure has been observed in as-deposited Ni/a-Si multilayers with small modulation periods. This phenomenon is suggested to be due to interdiffusion-induced solid state amorphization which is facilitated by the high density of interface in the shorter modulation period multilayers. A thermodynamic and kinetic explanation is given for this phenomenon.

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Authors and Affiliations

  1. Institute of Physics, Academia Sinica, Beijing, 100080, China

    W. H. Wang & W. K. Wang

  2. International Center for Materials Physics, Academia Sinica, Shenyang, 110015, China

    W. K. Wang

Authors
  1. W. H. Wang
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  2. W. K. Wang
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Wang, W.H., Wang, W.K. Amorphization phenomenon in Ni/amorphous Si multilayers. Journal of Materials Research 9, 401–405 (1994). https://doi.org/10.1557/JMR.1994.0401

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  • DOI: https://doi.org/10.1557/JMR.1994.0401

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