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Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy

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Abstract

Monocrystalline AlN(0001) films with few defects were deposited on vicinal α(6H)–SiC(0001) wafers via plasma-assisted, gas-source molecular beam epitaxy within the temperature range of 1050–1200 °C. The Al was thermally evaporated from an effusion cell. An electron cyclotron resonance plasma source was used to produce activated nitrogen species. Growth on vicinal Si(100) at 900–1050 °C resulted in smooth, highly oriented AlN(0001) films.

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Author notes

  1. L. B. Rowland

    Present address: Naval Research Laboratory, SW, Code 6861, 4555 Overlook Avenue, 20375-5320, Washington, DC, USA

Authors and Affiliations

  1. Department of Materials Science and Engineering, North Carolina State University, North Carolina, Box 7907, 27695-7907, Raleigh, USA

    L. B. Rowland, R. S. Kern, S. Tanak & Robert F. Davis

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  1. L. B. Rowland
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  2. R. S. Kern
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  3. S. Tanak
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  4. Robert F. Davis
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Rowland, L.B., Kern, R.S., Tanak, S. et al. Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy. Journal of Materials Research 8, 2310–2314 (1993). https://doi.org/10.1557/JMR.1993.2310

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  • DOI: https://doi.org/10.1557/JMR.1993.2310

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