Abstract
Amorphous silicon carbide films (a–SixC1−x :H) deposited by the argon- or helium-diluted PECVD technique were studied as a function of their composition. Microstructural investigations were mainly achieved by means of FTIR and XPS techniques. Nuclear techniques were used to obtain precise information on the film hydrogen content. The Si–H IR-absorption band was deconvoluted in different monohydride and dihydride silicon environments. The existence of SiH2 bonds in the Si-rich composition was evidenced. From the analysis of the C–H and Si–H absorption bands it is shown that hydrogen atoms are preferentially bonded to carbon atoms. The deconvolution of the Si2p core level peak suggests that above a composition of x ∊ 0.5, the noncarburized (Si, Si, H) local environment contribution increases to the detriment of the hydrocarburized (Si, C, H) environments. From the evolution of the C1s peak, it can be deduced that there is a change in the carbon atom bonding states when the film composition is varied. These results are correlated and discussed in terms of the local bonding environments and their evolution with film composition.
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D. A. Anderson and W. E. Spear, Philos. Mag. 35, 1 (1976).
T. Simada, Y. Katayama, and K. F. Komatsubara, J. Appl. Phys. 50, 5530 (1979).
V. Roedern, D. K. Paul, J. Blake, R. W. Collins, G. Moddel, and W. Paul, Phys. Rev. B 25, 7678 (1982).
A. Matsuda, T. Yamaoka, S. Wolff, M. Koyama, Y. Imanishi H. Kataoka, H. Matsuura, and K. Tanaka, J. Appl. Phys. 60, 4025 (1986).
K. Mui, D. K. Basa, and F. W. Smith, J. Appl. Phys. 59, 582 (1986).
J. L. Andujar, E. Bertran, A. Canillas, C. Roch, and J. L. Morenza, J. Vac. Sci. Technol. A9, 2216 (1991).
H. Wieder, M. Cardona, and C. R. Guarnieri, Phys. Status Solidi (b) 92, 99 (1979).
G. Lucovsky, Solid State Commun. 29, 571 (1979).
Y. Catherine and G. Turban, Thin Solid Films 70, 101 (1980).
M. A. Petrich, K. K. Gleason, and J. A. Reimer, Phys. Rev. B 36 (18), 9722 (1987).
W. Y. Lee, J. Appl. Phys. 51 (6), 3365 (1980).
R. R. Koropecki, F. Alvarez, and R. Arce, J. Appl. Phys. 69 (11), 7805 (1991).
A. Tabata, S. Fujii, Y. Susuoki, T. Mizutani, and M. Leda, J. Phys. D: Appl. Phys. 23, 316 (1990).
A. Filiponi, P. Fiorini, F. Evangelisti, A. Balerna, and S. Mobilio, J. de Physique C-8 47, 357 (1986).
R. B. Rizk, A. E. Kaloyeros, W. S. Williams, N. Finnegan, and C. Kozlonvsky, in Novel Refractory Semiconductors, edited by D. Emin, T. L. Aselage, and C. Wood (Mater. Res. Soc. Symp.Proc. 97, Pittsburgh, PA, 1987), p. 295.
K. Mui, D. K. Basa, and F. W. Smith, Phys. Rev. B 35, 8089 (1987).
E. Gat, B. Cros, R. Berjoan, and J. Durand, Material and Manufacturing Processes 7 (3) (1991, in press).
R. S. Rosier, W. C. Benzing, and J. Baldo, Solid State Technol., June (1976), p. 45.
A. M. Haghiri-Gosnet, F. Rousseaux, B. Kebabi, F. R. Ladan, C. Mayeux, A. Madouri, D. Decanini, J. Bourneix, F. Corcenac, H. Launois, B. Wisnicvsky, E. Gat, and J. Durand, J. Vac. Sci. Technol. B8 (6), 1565 (1990).
M. Chaker, S. Boily, A. Ginovker, A. Jean, J. C. Kieffer, P. P. Mercier, H. Pépin, P. K. Leung, J. F. Currie, and H. Lafontaine, in “Electron-Beam, X-ray and Ion-Beam Submicrometer Lithographies for Manufacturing,” edited by M. Peckerar (SPIE Proceedings, Vol. 1465, Bellingham, WA, 1991), p. 16.
B. Cros, R. Berjoan, C. Monteil, E. Gat, N. Azema, D. Perarnau, and J. Durand, in Proc. 8th European Conf. on Chemical Vapour Deposition, edited by M. L. Hitchman and N. J. Archer (J. Phys. III, Les Ulis, France, 1992, in press).
A. Jean, M. Chaker, Y. Diawara, E. Gat, P. K. Leung, P. P. Mercier, H. Pepin, S. Gujrathi, G. G. Ross, and J. C. Kieffer, to be published in J. Appl. Phys. (1992).
A. Guivrac’h, J. Richard, M. Le Contellec, E. Ligeon, and J. Fontenille, J. Appl. Phys. 51, 2167 (1980).
D. K. Basa and F. W. Smith, Thin Solid Films 192, 121 (1990).
A. E. Huges and B. A. Sexton, J. Elect. Spect. and Relat. Phenom. 50, c5 (1990).
A. H. Mahan, P. Raboisson, D. L. Williamson, and R. Tsu, Solar Cells 21, 117 (1987).
Y. Tawada, in Amorphous Semiconductor Technologies and Devices, edited by Y. Hamakawa (JARECT, OHMSHA Ltd. and North-Holland Publishing Corp., 1983), Vol. 6, p. 148.
W. Beyer and H. Mell, in Disorder Semiconductors, edited by M. A. Castner, G. A. Thomas, and S. R. Ovshinsky (Plenum Press, New York, 1987) p. 641.
S. W. Rynders, A. Scheeline, and P. W. Bohn, J. Appl. Phys. 69 (5), 2951 (1991).
M. H. Brodsky, M. Cardona, and J. J. Cuomo, Phys. Rev. B 16, 6 (1977).
D. K. Basa and F. W. Smith, Thin Solid Films 192, 121 (1990).
P. Swift, Surf, and Interf. Analys. 4, 47 (1982).
A. Jaegle, A. Kalt, G. Nanse, and J. C. Peruchetti, Analysis 9, 252 (1981).
B. Lamontagne, E. Sacher, and M. R. Wertheimer, Appl. Surf. Sci. 52, 71 (1991).
Y. Katayama, K. Usami, and T. Shimada, Philos. Mag. B 43, 283 (1981).
A. G. Fitzgerald, A. Ehenderson, S. E. Hicks, P. A. Moir, and B. E. Storey, Surf, and Interf. Analys. 14, 376 (1989).
L. Pauling, The Nature of Chemical Bonds, 3rd ed. (Cornell University Press, Ithaca, NY, 1960), p. 85.
A. M. Haghiri-Gosnet, F. Rousseaux, E. Gat, J. Durand, and A. M. Flank, Microelectron. Eng. 17, 215 (1992).
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Gat, E., El Khakani, M.A., Chaker, M. et al. A study of the effect of composition on the microstructural evolution of a–SixC1−x: H PECVD films: IR absorption and XPS characterizations. Journal of Materials Research 7, 2478–2487 (1992). https://doi.org/10.1557/JMR.1992.2478
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DOI: https://doi.org/10.1557/JMR.1992.2478