Skip to main content
SpringerLink
Log in

Observations on the electrical characterization of the heteroepitaxially grown cubic SiC

  • Articles
  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

This paper deals with the electrical characterization of thin layers of cubic SiC, grown on (100) Si substrates. The resistivity and Hall coefficient for undoped SiC layers were measured between 10 K and 500 K. The influence of inhomogeneities on the electrical properties of the as-grown films has been established. The Hall data show a clear sign of a transition to impurity band conduction. The donor concentrations studied are in the “intermediate” range. The donor activation energy has been shown to decrease with increasing nitrogen concentration. The nitrogen concentration was measured by SIMS. The variation in nitrogen concentration is also seen in changes in the shape of the ESR spectrum. The presence of nitrogen in the intermediate concentration range is the most likely reason for the conflicting values reported for the donor ionization energy as measured by Hall and PL measurements.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. Nishino, J. A. Powell, and H. A. Will, Appl. Phys. Lett. 42, 460 (1983).

    Article  CAS  Google Scholar 

  2. P. Liaw and R. F. Davis, J. Electrochem. Soc. 132, 642 (1985).

    Article  CAS  Google Scholar 

  3. S. Yoshida, K. Sasaki, E. Sakuma, S. Misawa, and S. Gonda, Appl. Phys. Lett. 46, 766 (1985).

    Article  CAS  Google Scholar 

  4. K. Furukawa, A. Uemento, M. Shigota, A. Suzuki, and S. Makajima, Appl. Phys. Lett. 48, 1536 (1986).

    Article  CAS  Google Scholar 

  5. G. Kelner, S. Binari, K. Sieger, and H. Kong, IEEE Electron Device Lett. ED-8, 428 (1987).

  6. C. H. Carter, Jr. J. A. Edmond, J. W. Palmour, J. Ryu, H. J. Kim, and R. F. Davis, in Microscopic Identification of Electronic Defects in Semiconductors, edited by N. M. Johnson, S. G. Bishop, and G. D. Watkins (Mater. Res. Soc. Symp. Proc. 46, Pittsburgh, PA, 1985), p. 593.

    Google Scholar 

  7. P. Pirouz, C. M. Chorey, T. T. Cheng, and J. A. Powell, in Heteroepitaxy on Silicon II, edited by J. C. C. Fan, J. M. Phillips, and B-Y. Tsaur (Mater. Res. Soc. Symp. Proc. 91, Pittsburgh, PA, 1987), p. 399.

    Google Scholar 

  8. L. S. Aivazova, S. N. Gorin, V. G. Sidyakin, and I. M. Shvarts, Sov. Phys. Semicond. 11, 1069 (1977).

    Google Scholar 

  9. A. Rosengreen, Mater. Res. Bull. IV, 355 (1969).

    Google Scholar 

  10. .W. E. Carlos, W. J. Moore, P. G. Siebenmann, J. A. Freitas, Jr. R. Kaplan, S. G. Bishop, P. E. R. Nordquist, Jr. M. Kong, and R. F. Davis, in Novel Refractory Semiconductors, edited by D. Emin, T. L. Aselage, and C. Wood (Mater. Res. Soc. Symp. Proc. 97, Pittsburgh, PA, 1987), p. 253.

    Google Scholar 

  11. Yu. M. Altaiskii, I. M. Zaritskii, V. Ya. Zevin, and A. A. Knochits, Sov. Phys.-Solid State 12, 2453 (1971).

    Google Scholar 

  12. G. Feher, Phys. Rev. 114, 1219 (1959).

    Article  CAS  Google Scholar 

  13. J. A. Lely and F. A. Kroger, Halbleiter und Phosphore, Vortrage des internationalen Kolloquims 1956 in Garraisch-Partenkirchen (Vieweg, Braunschweig, 1958), p. 525.

    Google Scholar 

  14. J. S. van Wieringen, Halbleiter und Phosphore, Vortrage des internationalen Kolloquims 1956 in Garmisch-Partenkirchen (Vieweg, Braunschweig, 1958), p. 367.

    Google Scholar 

  15. G. A. Lomakina, Sov. Phys.-Solid State 7, 475 (1965).

    Google Scholar 

  16. G. N. Violina, Y. Liang-Hsiu, and G. F. Kholuyanov, Sov. Phys.-Solid State 5, 2500 (1964).

    Google Scholar 

  17. S. N. Gorin and A. A. Pletyushkin, Izv. Akad. Nauk SSSR Ser.Fiz. 28, 1310 (1964).

    CAS  Google Scholar 

  18. W. E. Nelson, F. A. Halden, and A. Rosengreen, J. Appl. Phys. 37, 333 (1966).

    Article  CAS  Google Scholar 

  19. W. von Munch, in Landolt-Bornstain Numerical data and functional relationships in science and technology, edited by O. Madelung (Springer-Verlag, Berlin, Germany, 1982), Vol. 17 A.

    Google Scholar 

  20. A. Suzuki, A. Uemoto, M. Shigeta, K. Furukawa, and S. Nakajima, Appl. Phys. Lett. 49, 450 (1986).

    Article  CAS  Google Scholar 

  21. B. Segall, S. A. Alterovitz, E. J. Haughland, and L. G. Matus, Appl. Phys. Lett. 50, 1533 (1987).

    CAS  Google Scholar 

  22. M. Shinohara, M. Yamanaka, H. Daimon, E. Sakuma, H. Okumara, S. Misawa, K. Endo, and S. Yoshida, Jpn. J. Appl. Phys. 27, L434 (1988).

    Article  CAS  Google Scholar 

  23. A. Suzuki, A. Ogura, K. Furukawa, Y. Fujii, K. Shigeta, and S. Nakajima, J. Appl. Phys. 64, 2818 (1988).

    Article  CAS  Google Scholar 

  24. B. Segall, S. A. Alterovitz, E. J. Haughland, and L. G. Matus, Appl. Phys. Lett. 49, 548 (1986).

    Article  Google Scholar 

  25. T. Tachibana, H. S. Kong, Y. C. Wang, and R. F. Davis, J. Appl. Phys. 67, 6375 (1990).

    Article  CAS  Google Scholar 

  26. W. J. Choyke, D. R. Hamilton, and Lyle Patrick, Phys. Rev. 133, A1163 (1964).

    Article  Google Scholar 

  27. P. J. Dean, W. J. Choyke, and Lyle Patrick, J. Lumin. 15, 299 (1977).

    Article  CAS  Google Scholar 

  28. W. J. Choyke and Lyle Patrick, Phys. Rev. B 2, 4959 (1970).

    Article  Google Scholar 

  29. N. N. Long, D. S. Nedzvetskii, N. K. Prokofava, and M. B. Reifman, Opt. Spectrosc. 29, 388 (1970).

    Google Scholar 

  30. W. J. Choyke, Z. C. Feng, and J. A. Powell, J. Appl. Phys. 64, 3163 (1988).

    Article  CAS  Google Scholar 

  31. J. A. Freitas, Jr., S. G. Bishop, J. A. Edmond, J. Ryu, and R. F. Davis, J. Appl. Phys. 61, 2011 (1987).

    Article  CAS  Google Scholar 

  32. J. W. Palmour, R. F. Davis, and P. Astell-Burt, Sci. Technol. Microfab. 77, 185 (1987).

    Google Scholar 

  33. P. Pirouz, C. M. Chorey, and J. A. Powell, Appl. Phys. Lett. 50, 221 (1987).

    Article  CAS  Google Scholar 

  34. T. T. Cheng, P. Pirouz, and J. A. Powell, in Chemistry and Defects in Semiconductor Heterostructures, edited by M. Kawabe, T. D. Sands, E. R. Weber, and R. S. Williams (Mater. Res. Soc. Symp.Proc. 148, Pittsburgh, PA, 1989), p. 229.

    Google Scholar 

  35. H. J. van Daal, Philips Res. Rep. Suppl. 3, 48, 1 (1965).

    Google Scholar 

  36. H. Fritzsche, Phys. Rev. 99, 406 (1955).

    Article  CAS  Google Scholar 

  37. R. Kaplan, R. J. Wagner, H. J. Kim, and R. E. Davis, Solid State Commun. 55, 67 (1985).

    Article  CAS  Google Scholar 

  38. E. A. Davis and W. Dale Compton, Phys. Rev. 140 A, 2183 (1965).

    Article  CAS  Google Scholar 

  39. G. E. Stillman and C M. Wolfe, Thin Solid Films 31, 69 (1976).

    Article  CAS  Google Scholar 

  40. H. C. Casey, Jr. F. Ermanis, and K. B. Wolfstirn, J. Appl. Phys. 40, 2945 (1969).

    Article  CAS  Google Scholar 

  41. T. L. Lee and T. C McGill, J. Appl. Phys. 46, 373 (1975).

    Article  CAS  Google Scholar 

  42. D. Schechter, J. Appl. Phys. 61, 591 (1986).

    Article  Google Scholar 

  43. H. Fritzsche, Phys. Rev. 125, 1552 (1961).

    Article  Google Scholar 

  44. H. Nishimura, Phys. Rev. 138 A, 815 (1965).

    Article  Google Scholar 

  45. A. I. Veinger, Sov. Phys.-Semicond. 1, 14 (1967).

    Google Scholar 

  46. H. Okumura, M. Shinohara, S. Kuroda, K. Endo, E. Sakuma, S. Misawa, and S. Yoshida, Jpn. J. Appl. Phys. 27, 1712 (1988).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Naval Research Laboratory, 20375-5000, Washington, DC, USA

    B. Molnar

Authors
  1. B. Molnar
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Molnar, B. Observations on the electrical characterization of the heteroepitaxially grown cubic SiC. Journal of Materials Research 7, 2465–2477 (1992). https://doi.org/10.1557/JMR.1992.2465

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/JMR.1992.2465

Search

Navigation