Abstract
TiO2 rutile thin films grown on (112̅0) sapphire (α−Al2O3) by the MOCVD technique have been characterized by transmission electron microscopy (TEM) and high resolution electron microscopy (HREM). The TiO2 rutile thin films grew on the sapphire with two epitaxial orientations. The epitaxial orientation relationships between the rutile films (R) and the sapphire substrate (S) were found to be (1) (101)[010]R ‖ (112̅0)[0001]s. Detailed atomic structures of near-interface regions have been investigated by HREM, providing a clear picture of the initial stage of film growth. HREM images show that about 70% of the nuclei at the interface are the (101) rutile, but most of them are very small, about 5 nm (or 2% of the film thickness) in the growth direction. The film growth was dominated by the (200) orientation. Nucleation and growth of the films will be discussed in terms of the lattice mismatch at the interface and growth rates along the two orientations. Planar defects such as twin boundaries and special grain boundaries are commonly observed in the films, especially in regions close to the substrate. The twin plane and twinning direction are {101} and 〈101〉, respectively. Special grain boundaries are found to be correlated with nucleation and twinning.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
K. S. Goto, Solid State Electrochemistry and Its Applications to Sensors and Electronic Devices (Elsevier, New York, 1988).
K. S. Yeung and Y. W. Lam, Thin Solid Films 109, 169 (1983).
E.G. Bauer, B.W. Dodson, D.J. Ehrlich, L.C. Feldman, C.P. Flynn, M.W. Geis, J.P. Harbison, R.J. Matyi, P.S. Peercy, P. M. Petroff, J. M. Phillips, G. B. Stringfellow, and A. Zangwill, J. Mater. Res. 5, 852 (1990).
H. L. M. Chang, J. C. Parker, H. You, J. J. Xu, and D. J. Lam, in Chemical Vapor Deposition of Refractory Metals and Ceramics, edited by T. M. Besmarm and B. M. Gallois (Mater. Res. Soc. Symp. Proc. 168, Pittsburgh, PA, 1990), p. 343.
S. Hayashi and T. Hirai, J. Cryst. Growth 36, 157 (1976).
D.J. Cheng, W.P. Sun, and M.H. Hon, Thin Solid Films 109, 45 (1987).
M. Yokozawa, H. Iwasa, and I. Teramoto, Jpn. J. Appl. Phys. 7, 96 (1968).
E.T. Fitzgibbons, K.J. Sladek, and W.H. Hartwig, J. Electrochem. Soc. 119, 92 (1972).
T. Fuyuki, T. Kobayashi, and H. Matsunami, J. Electrochem. Soc. 135, 248 (1988).
Y. Takahashi, H. Suzuki, and M. Nasu, J. Chem. Soc, Faraday Trans. 1 81, 3117 (1985).
K.L. Siefering and G. L. Griffin, J. Electrochem. Soc. 137, 814 (1990).
Y. Gao, K. L. Merkle, H. L. M. Chang, T. J. Zhang, and D. J. Lam, in Defects in Materials, edited by P. D. Bristowe, J. E. Epperson, J.E. Griffith, and Z. Liliental-Weber (Mater. Res. Soc. Symp. Proc. 209, Pittsburgh, PA, 1991), p. 685.
B.G. Hyde and S. Anderson, Inorganic Crystal Structures (John Wiley & Sons, New York, 1989).
P. B. Hirsch, A. Howie, R. B. Nicholson, D. W. Pashley, and M. J. Whelan, Electron Microscopy of Thin Crystals (Butterworth’s, London, 1967).
J. W. Matthews, Epitaxial Growth (Academic Press, New York, 1975).
Y. Gao and H. L. M. Chang, unpublished research.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Gao, Y., Merkle, K.L., Chang, H.L.M. et al. Microstructure of TiO2 rutile thin films deposited on (112̅0) α−Al2O3. Journal of Materials Research 6, 2417–2426 (1991). https://doi.org/10.1557/JMR.1991.2417
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/JMR.1991.2417