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Application of the bond valence method to Si/NiSi2 interfaces

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Abstract

It is shown how the bond valence method can be used to estimate expected interatomic distances in coherent interfaces. The method is illustrated by application to the Si/NiSi2 (111) interface with results generally in accord with experimental data.

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Authors and Affiliations

  1. Department of Chemistry, Arizona State University, Tempe, Arizona, 85287, USA

    M. O’Keeffe

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  1. M. O’Keeffe
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O’Keeffe, M. Application of the bond valence method to Si/NiSi2 interfaces. Journal of Materials Research 6, 2371–2374 (1991). https://doi.org/10.1557/JMR.1991.2371

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  • DOI: https://doi.org/10.1557/JMR.1991.2371

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