Skip to main content
SpringerLink
Log in

Thin silicon dioxide and nitrided oxide using rapid thermal processing for trench capacitors

  • Articles
  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

Electrical characteristics of trench capacitors using RTO (Rapid Thermal Oxidation) oxides, nitroxides, and reoxidized nitroxides as the gate insulators are discussed. High temperature RTO is effective in preventing oxide thinning at the trench corner, and so the dielectric strength of trench capacitors is improved drastically. The mean time to failure (MTTF) of trench capacitors using RTO is more than ten times longer than that of trench capacitors using conventional furnaces. Using reoxidized nitroxides as the gate insulator, superior charge to breakdown (QBD) is obtained. RTP (Rapid Thermal Processing) is superior to the process using the conventional furnace for the gate insulators of trench capacitors. Improvements in temperature uniformity, repeatability, and lessening of slip line formation are essential for RTP equipment to be practical.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. K. Imai, K. Yamabe, Y. Tsunashima, K. Iwai, K. Tashiro, and H. Tango, IEDM Tech. Dig., 702 (1985).

  2. R. B. Marcus and T. T. Sheng, J. Electrochem. Soc. 129, 1278 (1982).

    Article  CAS  Google Scholar 

  3. E. A. Irene, E. Tierney, and J. Angillelo, J. Electrochem. Soc. 129, 2594 (1982).

    Article  CAS  Google Scholar 

  4. J. Nulman, J. P. Kurusius, and A. Gat, IEEE Electron Device Lett. EDL-6, 205 (1985).

    Article  CAS  Google Scholar 

  5. M.M. Moslehi and S.C. Saraswat, Appl. Phys. Lett. 47, 1353 (1985).

    Article  CAS  Google Scholar 

  6. J.P. Poagon, J.J. Grob, and R. Stuck, J. Appl. Phys. 59, 3921 (1986).

    Article  Google Scholar 

  7. Y. Sato and K. Kikuchi, J. Electrochem. Soc. 133, 652 (1986).

    Article  CAS  Google Scholar 

  8. M. M. Moslehi, C. J. Han, and K. C. Saraswat, J. Electrochem. Soc. 132, 2189 (1985).

    Article  CAS  Google Scholar 

  9. T. Hori, Y. Naito, H. Iwasaki, and H. Esaki, IEEE Electron Device Lett. EDL-7, 669 (1986).

    Article  CAS  Google Scholar 

  10. M. Inoue and K. Yoneda, in Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing, edited by D. Hodul, J.C. Gelpey, M.L. Green, and T.E. Seidel (Mater. Res. Soc. Symp. Proc. 146, Pittsburgh, PA, 1989), p. 283.

  11. Y. Horiike, H. Okano, T. Yamazaki, and H. Horie, Jpn. J. Appl. Phys. 20, 1817 (1981).

    Article  Google Scholar 

  12. T. Hori, H. Iwasaki, Y. Naito, and H. Esaki, IEEE Trans. Electron Devices ED-34, 11, 2238 (1987).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Kyoto Research Laboratory, Matsushita Electronics Corporation, 19, Nishikujo-Kasugacho, Minami-ku, Kyoto, 601, Japan

    Kenji Yoneda, Yoshihiro Todokoro & Morio Inoue

Authors
  1. Kenji Yoneda
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Yoshihiro Todokoro
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Morio Inoue
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Yoneda, K., Todokoro, Y. & Inoue, M. Thin silicon dioxide and nitrided oxide using rapid thermal processing for trench capacitors. Journal of Materials Research 6, 2362–2370 (1991). https://doi.org/10.1557/JMR.1991.2362

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/JMR.1991.2362

Search

Navigation