Skip to main content
SpringerLink
Log in

Selective epitaxial growth of silicon

  • Articles
  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

We have studied selective epitaxial growth of silicon in the SiCl2H2/HCl/H2 system. Our results on growth rate and selectivity are reported here. We found that the growth rate and selectivity are strong functions of the partial pressures of HCl, SiCl2H2, H2, exposed Si area, and wafer position. We propose that growth and selectivity are controlled by surface reactions between SiCl2H2 and HCl and the SiO2 and Si surfaces. Higher HCl flow rates decrease the adsorption coefficients and/or incorporation rates of the reactive SiCl2H2(g) species on both SiO2 and Si. When either is zero for SiO2 and both are greater than zero on Si, selective depositions occur. Finally, we present data on the effect various SiO2 surface treatments have on the density and distribution of Si nuclei on this surface.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J. Manoliu and J. Borland, IEEE IEDM Tech. Digest, 20C (1987).

  2. A. Ishitani, H. Kitajima, K. Tanno, and H. Tsuya, Microelectronic Eng. 4 (3) (1986).

  3. A. Stivers, C. Ting, and J. Borland, in Chemical Vapor Deposition, 1987, ECS 87–88, 389 (1987).

    Google Scholar 

  4. J. Bungarti, B.S. Grinburg, S.R. Mader, T.C. Chen, and D.L. Harame, IEEE Electron Device Lett. 9, 25a (1988).

  5. C. I. Drowley, G. A. Reid, and R. Hull, Appl. Phys. Lett. 52, 546 (1988).

    Article  CAS  Google Scholar 

  6. V.J. Silvestri, J. Electrochem. Soc. 135, 1806 (1988).

    Article  Google Scholar 

  7. J. Borland, M. Gangahi, R. Wise, S. Fong, Y. Oka, and Y. Matsumoto, Solid State Technol. 31 (1), 111 (January 1988).

  8. T. Sugii, T. Yamazski, T. Fukano, and T. Ito, Proc. Symp. on 1987 VLSI Technology, Karuizawa, Jpn., Section V-3, p. 35 (May 1987).

  9. J. Borland and C. Drowley, Solid State Technol. 28 (8), 141 (August 1985).

  10. See, for example, K. M. Kearney, Semiconductor International 80, 79 (January 1989).

  11. Particle Measuring System Inc., Model PLILP-S particle counter, made by Particle Measuring System, Inc., Boulder, CO.

  12. G.S. Oehrlein, G.J. Scilla, and S.J. Jeng, Appl. Phys. Lett. 52 (11), 907 (1988).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. AT&T Bell Laboratories, 555 Union Boulevard, Allentown, Pennsylvania, 18103, USA

    J. W. Osenbach

  2. AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey, 07974-2070, USA

    A. Feygenson

  3. AT&T Bell Laboratories, 2525 North 12th Street, Reading, Pennsylvania, 19612-3566, USA

    J. J. Bastek, J. C. C. Tsai & H. C. Praefcke

  4. AT&T Bell Laboratories, 555 Union Boulevard, Allentown, Pennsylvania, 18103, USA

    E. W. Bonato

Authors
  1. J. W. Osenbach
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. D. G. Schimmel
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. Feygenson
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. J. J. Bastek
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. J. C. C. Tsai
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. H. C. Praefcke
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. E. W. Bonato
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Osenbach, J.W., Schimmel, D.G., Feygenson, A. et al. Selective epitaxial growth of silicon. Journal of Materials Research 6, 2318–2323 (1991). https://doi.org/10.1557/JMR.1991.2318

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/JMR.1991.2318

Search

Navigation