Abstract
Tungsten disilicide (WSi2) was formed by annealing tungsten (W) films of 330 nm and 750 nm prepared by low pressure chemical vapor deposition (LPCVD) from tungsten hexafluoride (WF6) on Czochralski 〈100〉-Si substrates. The silicide was found to grow continuously from the WSi2/W interface. The thickness of the formed WSi2 was observed by Rutherford backscattering measurements (RBS) to increase parabolically with the annealing time, with an activation energy of 2.6 eV/atom. The crystal structure of the formed WSi2 and the unreacted W films was analyzed using x-ray diffraction (XRD) technique. The thermal history of the samples was found to play an important role for the film texture of the unreacted W and formed WSi2, indicating that the fast and inexpensive method, XRD, applied as a thickness monitor for kinetics studies of WSi2 growth will undoubtedly introduce large errors. The as-deposited W (on Si) and the unreacted W (on WSi2) were found to be under a tensile stress, as observed by means of the XRD technique.
Similar content being viewed by others
References
L.D. Locker and CD. Capio, J. Appl. Phys. 44, 4366 (1973).
J. A. Borders and J. N. Sweet, in Applications of Ion Beams to Metals, edited by S.T. Picraux, E.P. EerNisse, and F.L. Vook (Plenum Press, New York, 1974), p. 179.
J. Lajzerowicz, J. Torres, G. Goeltz, and R. Pantel, Thin Solid Films 140, 23 (1986).
K. Suguro, Y. Nakasaki, S. Shima, T. Yoshii, T. Moriya, and H. Tango, J. Appl. Phys. 62, 1265 (1987).
E. Ma, B.S. Lim, M-A. Nicolet, N.S. AM, and A.H. Hamdi, J. Electron . Mater. 17, 207 (1988).
H. S. Lee and G. J. Wolga, J. Electrochem. Soc. 137, 684 (1990).
D. J. Silversmith, D. D. Rathman, and R. W. Mountain, Thin Solid Films 93, 413 (1982).
G. Göltz, J. Torres, J. Lajzerowicz, and G. Bomchil, Thin Solid Films 124, 19 (1985).
G. Bomchil, G. Goeltz, and J. Torres, Thin Solid Films 140, 59 (1986).
R. S. Blewer and M. E. Tracy, in Tungsten and Other Refractory Metals for VLSI Applications I, edited by R. S. Blewer (Mater. Res. Soc. Symp. Proc. No. V-l, Pittsburgh, PA, 1986), pp. 53–62.
Y. Pauleau, F. C. Dassapa, Ph. Lami, J. C. Oberlin, and F. Romagna, J. Mater. Res. 4, 156 (1989).
O. Thomas, A. Charai, F. M. d’Heurle, T. G. Finstad, and R. V. Joshi, Thin Solid Films 171, 343 (1989).
H. S. Lee and G. J. Wolga, J. Electrochem. Soc. 137, 2618 (1990).
S-L. Zhang, U. Smith, R. Buchta, and M. Ostling, J. Appl. Phys. 69, 217 (1991).
E. K. Broadbent and C.L. Rammer, J. Electrochem. Soc. 131, 1427 (1984).
M. L. Green and R.A. Levy, J. Electrochem. Soc. 132, 1243 (1985).
J-O. Carlsson and M. Boman, J. Vac. Sci. Technol. A3, 2298 (1985).
J-O. Carlsson and A. Hårsta, Thin Solid Films 158, 107 (1988).
W. Kern and V. S. Ban, in Thin Film Processes, edited by J.L. Vossen and W. Kern (Academic Press, New York, 1978), p. 258.
B.D. Cullity, Elements ofX-Ray Diffraction, 2nd ed. (Addison-Wesley Publishing Company, Inc., 1978), p. 513.
M-A. Nicolet and S. S. Lau, in VLSI Electronics Microstructure Science, edited by N. G. Einspruch and G. B. Larrabee (Academic Press, New York, 1983), Vol. 6, p. 408.
M-A. Nicolet and S. S. Lau, in VLSI Electronics Microstructure Science, edited by N. G. Einspruch and G. B. Larrabee (Academic Press, New York, 1983), Vol. 6, p. 329.
P. R. Gage and R. W. Bartlett, TMS-AIME 233, 832 (1965).
J. Baglin, F. d’Heurle, and S. C. Petersson, Appl. Phys. Lett. 33, 289 (1978).
J. Baglin, J. Dempsey, W. Hammer, F. d’Heurle, S. C. Petersson, and C. Serrano, J. Electron. Mater. 8, 641 (1979).
B. D. Cullity, Elements of X-Ray Diffraction, 2nd ed. (Addison-Wesley Publishing Company, Inc., 1978), pp. 292–293.
Standard JCPDS diffraction pattern 4–806 (Body-centeredcubic W).
T.I. Kamins, D.R. Bradbury, T.R. Cass, S.S. Laderman, and G.A. Reid, J. Electrochem. Soc. 133, 2555 (1986).
S-L. Zhang, R. Buchta, and M. Östling, in Chemical Vapor Deposition of Refractory Metals and Ceramics, edited by T. M. Besmann and B. M. Gallois (Mater. Res. Soc. Symp. Proc. 168, Pittsburgh, PA, 1990), p. 173.
B. D. Cullity, Elements of X-Ray Diffraction, 2nd ed. (Addison-Wesley Publishing Company, Inc., 1978), Chap. 11.
Standard JCPDS diffraction pattern 11–195 (Tetragonal WSi2).
Y. Shioya, K. Ikegami, M. Maeda, and K. Yanagida, J. Appl. Phys. 61, 561 (1987).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Zhang, SL., Buchta, R. & Östling, M. A study of silicide formation from LPCVD-tungsten films: Film texture and growth kineticsa . Journal of Materials Research 6, 1886–1891 (1991). https://doi.org/10.1557/JMR.1991.1886
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/JMR.1991.1886