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Thin films of rf-magnetron sputtered InN on mica: Crystallography, electrical transport, and morphology

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Abstract

Reactive rf-magnetron sputtering has been employed for the growth of thin films of InN on the (001) face of mica at a variety of substrate temperatures from 50 to 550 °C. These films have been characterized by x-ray scattering, stylus profilometry, and electrical transport measurements, and their topography has been studied by SEM and STM. At low deposition temperatures, the InN films exhibit texture [(00.1)InN‖ (001)mica], while at higher deposition temperatures a large fraction of the grains are heteroepitaxial [(00.1)InN‖(001)mica, (21.0)InN · (060)mica]. The utility of the x-ray precession method in the determination of this heteroepitaxial relationship is highlighted. The films exhibit a local mobility maximum near a substrate temperature of 350 °C, beyond which a sharp increase in resistivity associated with voids and cracks owing to the onset of secondary grain growth leads to a dramatic decrease in electrical mobility. At the highest growth temperatures, however, the interconnection between grains improves and lower resistivity and higher mobility are re-established.

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Authors and Affiliations

  1. Milton S. Eisenhower Research Center, Applied Physics Laboratory, The Johns Hopkins University, Laurel, Maryland, 20723-6099, USA

    T. J. Kistenmacher, W. A. Bryden, J. S. Morgan, D. Dayan, R. Fainchtein & T. O. Poehler

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  1. T. J. Kistenmacher
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  2. W. A. Bryden
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  3. J. S. Morgan
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  4. D. Dayan
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  5. R. Fainchtein
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  6. T. O. Poehler
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Kistenmacher, T.J., Bryden, W.A., Morgan, J.S. et al. Thin films of rf-magnetron sputtered InN on mica: Crystallography, electrical transport, and morphology. Journal of Materials Research 6, 1300–1307 (1991). https://doi.org/10.1557/JMR.1991.1300

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  • DOI: https://doi.org/10.1557/JMR.1991.1300

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