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The role of radiation in melt stability in zone-melt recrystallization of SOI

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Abstract

Under circumstances in Zone-Melt-Recrystallization (ZMR) of Si-on-Insulator (SOI) structures where radiative heat loss is significant, the ∼50% decrease in emissivity when Si melts destabilizes the Si molten zone. We have demonstrated this both experimentally using a slowly scanned e-beam line source and numerically with a finite-element computational simulation. The resulting instability narrows the process window and tightens requirements on beam control and background heating uniformity, both for e-beam ZMR systems and optically-coupled systems such as a graphite strip heater.

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Authors and Affiliations

  1. Sandia National Laboratories, 87185, Albuquerque, New Mexico, USA

    J. A. Knapp

  2. Colorado State University, Ft. Collins, 80523, Colorado, USA

    L. R. Thompson & G. J. Collins

Authors
  1. J. A. Knapp
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  2. L. R. Thompson
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  3. G. J. Collins
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Knapp, J.A., Thompson, L.R. & Collins, G.J. The role of radiation in melt stability in zone-melt recrystallization of SOI. Journal of Materials Research 5, 998–1002 (1990). https://doi.org/10.1557/JMR.1990.0998

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  • DOI: https://doi.org/10.1557/JMR.1990.0998

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