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Grain growth in boron doped LPCVD polysilicon films

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Abstract

Dopant induced grain growth in LPCVD polysilicon films has been investigated using BBr3 as the diffusion source at 900 and 950 °C. TEM and sheet resistance measurements indicate rapid growth under such doping conditions. Results are compared with the grain growth observed during (a) PBr3 doping of similar films, and (b) during anneals in ambients containing 1% oxygen in nitrogen, similar to that used during BBr3 or PBr3 doping. The results clearly demonstrate the rapid grain growth induced by both types of dopants, although phosphorus is more effective in inducing this grain growth.

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References

  1. T. I. Kamins, Polycrystalline Silicon for Integrated Circuit Applications (Kluwer Academic Publishers, 1988).

  2. S. M. Sze, VLSI Technology (McGraw-Hill, New York, 1983).

    Google Scholar 

  3. C. Daey Ouwens and H. Heijligers, Appl. Phys. Lett. 26, 569 (1975).

    Article  CAS  Google Scholar 

  4. Y. Wada and S. Nishimatsu, J. Electrochem. Soc. 125, 1499 (1978).

    Article  CAS  Google Scholar 

  5. S. Solmi, M. Severi, R. Angelucci, L. Baldi, and R. Bilenchi, J. Electrochem. Soc. 129, 1811 (1982).

    Article  CAS  Google Scholar 

  6. L. Mei, M. Rivier, Y. Kwark, and R. W. Dutton, J. Electrochem. Soc. 129, 1791 (1982).

    Article  CAS  Google Scholar 

  7. T. Makino and H. Nakamura, Solid State Electron. 24, 49 (1981).

    Article  Google Scholar 

  8. C. V. Thompson, “Grain-Growth in Polycrystalline Silicon Films”, paper #G3.1 presented at the Materials Research Society 1987 Fall Meeting, Nov. 30–Dec. 5, 1987, Boston, MA.

  9. H. J. Kim and C. V. Thompson, “A Model for the Effects of Dopants on Grain Growth in Polysilicon Thin Films”, paper #G3.1, ibid.

  10. C. R. Helms, Stanford University, private communication to Ref. 1.

  11. D. A. Smith and T. Y. Tan, “Grain Boundaries in Semiconductors”, edited by H. J. Leamy, G. E. Pike, and C. H. Seager, Mater. Res. Soc. Symp. Proc. 5, 65 (1982).

  12. C. P. Ho and J. D. Plummer, J. Electrochem. Soc. 126, 1516 (1979).

    Article  CAS  Google Scholar 

  13. S. P. Murarka, Phys. Rev. B 16, 2849 (1977).

    Article  CAS  Google Scholar 

  14. S. P. Murarka, J. Vac. Sci. Technol. B 2 (4), 693 (1984).

    Article  CAS  Google Scholar 

Download references

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Authors and Affiliations

  1. Materials Engineering Department/CIE, Rensselaer Polytechnic Institute, Troy, New York, 12180, USA

    A. R. Sitaram & S. P. Murarka

  2. AT & T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey, 07974, USA

    T. T. Sheng

Authors
  1. A. R. Sitaram
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  2. S. P. Murarka
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  3. T. T. Sheng
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Sitaram, A.R., Murarka, S.P. & Sheng, T.T. Grain growth in boron doped LPCVD polysilicon films. Journal of Materials Research 5, 360–364 (1990). https://doi.org/10.1557/JMR.1990.0360

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  • DOI: https://doi.org/10.1557/JMR.1990.0360

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