Skip to main content
SpringerLink
Log in

Plasma deposition of a–Si, Ge: H, F thin films from SiF4–GeH4–H2 mixtures

  • Articles
  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

The deposition of hydrogenated and fluorinated silicon-germanium alloys (Si1−xGex:H.F) by glow discharge decomposition of silicon tetrafluoride (SiF4) and germane (GeH4) mixtures has been studied. Optical emission spectroscopy (OES), for the analysis of the emitting species in plasma phase, and mass spectroscopy (MS) for the analysis of the stable species, are used for the plasma diagnostics. In addition, in situ measurements of the deposition rate by laser interferometry are performed. A series of alloys with germanium content ranging from 0 to 55% has been prepared by varying the gas compositional ratio. Data on the optical gap (E c), sub-gap absorption, and photo-to-dark conductivity ratio (δσ/σ) are used to evaluate the quality of the materials. An alloy a–Si0.75Ge0.25: H, F having E c δ 1.5 eV and δσ/σ = 104 has been prepared by adding 1% of GeH4 to SiF4 in the feed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. Matsuda, Pure & Appl. Chem. 60 (5), 733 (1986).

    Article  Google Scholar 

  2. D. A. Anderson and W. E. Spear, Philos. Mag. 35, 1 (1977); Y. Catherine and G. Turban, Thin Solid Films 60, 193 (1979); ibid. 70, 101 (1980).

    Article  CAS  Google Scholar 

  3. S. Tsuda, H. Tarui, H. Haku, H. Dohjo, K. Watanabe, Y. Hishikawa, N. Nakamura, Y. Nakashima, T. Takahama, H. Nishiwaki, T. Fukatsu, S. Nakayama, M. Ohuishi, S. Nakano, and Y. Kuwano, Jpn. J. Appl. Phys. 25, 1795 (1986).

    Article  CAS  Google Scholar 

  4. K. Tanaka and A. Matsuda, Material Issues in Amorphous-Semiconductor Technology, edited by D. Adler, Y. Hamakawa, and A. Madan, Mat. Res. Soc. Symp. Proc. 70, 245 (1986).

  5. W. Paul, D. K. Paul, B. von Roedern, J. Blake, and S. Oguz, Phys. Rev. Lett. 46, 1016 (1981).

    Article  CAS  Google Scholar 

  6. T. Shimizu, M. Kumeda, A. Morimoto, Y. Tsujimura, and I. Kobayashi, Material Issues in Amorphous-Semiconductor Technology, edited by D. Adler, Y. Hamakawa, and A. Madan, Mat. Res. Soc. Symp. Proc. 70, 313 (1986); D. Slobodin, S. Aljishi, Y. Okada, D. S. Shen, V. Chu, and S. Wagner, ibid., p. 275.

  7. K. D. Mackenzie, J. Hanna, J. R. Eggert, Y. M. Li, Z. L. Sun, and W. Paul, J. Non-Cryst. Solids 77 & 78, 881 (1985).

    Article  Google Scholar 

  8. N. Matsukura, M. Ohuchi, S. Satoh, and Y. Macki, Thin Solid Films 109, 47 (1983).

    Article  Google Scholar 

  9. H. U. Lee and J. P. Deneufville, J. Non-Cryst. Solids 66, 39 (1984).

    Article  CAS  Google Scholar 

  10. R. d’Agostino, F. Cramarossa, S. De Benedictis, and F. Fracassi, Plasma Chem. & Plasma Process. 4, 163 (1984).

    Article  Google Scholar 

  11. F. J. Kampas and R. W. Griffith, J. Appl. Phys. 52, 1285 (1981); F. J. Kampas, J. Appl. Phys. 54, 2276 (1983).

    Article  CAS  Google Scholar 

  12. P. Capezzuto and G. Bruno, Pure & Appl. Chem. 60 (5), 633 (1988).

    Article  CAS  Google Scholar 

  13. G. Bruno, P. Capezzuto, G. Cicala, and F. Cramarossa, J. Appl. Phys. 62, 2050 (1987).

    Article  CAS  Google Scholar 

  14. G. Bruno, P. Capezzuto, G. Cicala, and F. Cramarossa, Proc. of the 8th Int. Symp. on Plasma Chemistry (Tokyo, Japan, 1987), p. 1434.

    Google Scholar 

  15. K. Nozawa, Y. Yamaguchi, J. Hanna, and I. Shimizu, J. Non-Cryst. Solids, 59 & 60, 533 (1983).

    Article  Google Scholar 

  16. H. Shirai, A. Tanabe, S. Oda, J. Hanna, T. Nakamura, and I. Shimizu, Appl. Phys. A 41, 259 (1986).

    Article  Google Scholar 

  17. G. Bruno, P. Capezzuto, and F. Cramarossa, Thin Solid Films 129, 217 (1985).

    Article  CAS  Google Scholar 

  18. L. Chahed, C. Senemaud, M. L. Theye, J. Bullot, M. Galin, M. Gauthier, B. Bourdon, and M. Toulemonde, Solid State Commun. 45, 649 (1983).

    Article  CAS  Google Scholar 

  19. W. Beyer, H. Wagner, and F. Finger, J. Non-Cryst. Solids 77 & 78, 857 (1985).

    Article  Google Scholar 

  20. L. Mariucci, F. Ferrazza, F. Evangelisti, and A. Frova, Proc. of the 8th E.C. Photovoltaic Solar Energy Conference, edited by I. Solomon, B. Equer, and P. Helm (Florence, Italy, 1988), p. 706.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Fall Meeting of the Materials Research Society, Plasma Assisted Deposition of New Materials (Symp. N), Massachusetts, 1987, Boston, USA

    G. Bruno

  2. Centro di Studio per la Chimica dei Plasmi, Dipartimento di Chimica, Universita di Bari, Bari, 173−70126, Via G. Amendola, Italy

    P. Capezzuto, G. Cicala & F. Cramarossa

Authors
  1. G. Bruno
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. P. Capezzuto
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. G. Cicala
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. F. Cramarossa
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Bruno, G., Capezzuto, P., Cicala, G. et al. Plasma deposition of a–Si, Ge: H, F thin films from SiF4–GeH4–H2 mixtures. Journal of Materials Research 4, 366–372 (1989). https://doi.org/10.1557/JMR.1989.0366

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/JMR.1989.0366

Search

Navigation