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Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing

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Abstract

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

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Authors and Affiliations

  1. Department of Electronics, Aichi Institute of Technology, Toyota, 470-03, Yakusa, Japan

    Yutaka Tokuda, Nobuji Kobayashi & Yajiro Inoue

  2. Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya, 466, Gokiso, Showa-ku, Japan

    Akira Usami

  3. Technical Division, Japan Silicon Co. Ltd., 278, Noda, Japan

    Makoto Imura

Authors
  1. Yutaka Tokuda
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  2. Nobuji Kobayashi
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  3. Yajiro Inoue
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  4. Akira Usami
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  5. Makoto Imura
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Tokuda, Y., Kobayashi, N., Inoue, Y. et al. Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing. Journal of Materials Research 4, 241–243 (1989). https://doi.org/10.1557/JMR.1989.0241

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  • DOI: https://doi.org/10.1557/JMR.1989.0241

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