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The annealing behavior of sputter-deposited Al–Mn and Al–Mn–Si films

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Abstract

The annealing behavior of amorphous and icosahedral Al–17Mn and Al–20Mn–4Si films, prepared by sputter deposition, have been studied. Both hot stage transmission electron microscopy of thin (20–200 nm) films and furnace annealing plus x-ray diffration of thicker (1–10μm) films were utilized to study the various transformations resulting from elevated temperature exposures. The results are presented and correlated with the reactions anticipated from the phase diagrams and the results reported in previous studies.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Washington, Seattle, 98105, Washington, USA

    M. J. Kaufman

  2. U.S. Department of Commerce, Institute for Materials Science and Engineering, National Bureau of Standards, Gaithersburg, 20899, Maryland, USA

    F. S. Biancaniello

  3. U.S. Department of Commerce, Center for Chemical Engineering, National Bureau of Standards, Gaithersburg, 20899, Maryland, USA

    K. G. Kreider

Authors
  1. M. J. Kaufman
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  2. F. S. Biancaniello
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  3. K. G. Kreider
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Kaufman, M.J., Biancaniello, F.S. & Kreider, K.G. The annealing behavior of sputter-deposited Al–Mn and Al–Mn–Si films. Journal of Materials Research 3, 1342–1348 (1988). https://doi.org/10.1557/JMR.1988.1342

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  • DOI: https://doi.org/10.1557/JMR.1988.1342

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