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Ultraviolet photon-induced heteroepitaxy of CdTe on GaAs

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Abstract

Ultraviolet photon-induced metalorganic vapor phase epitaxy of CdTe films on GaAs substrates has been investigated using diethyltelluride and dimethylcadmium as the precursor gases. The relationship between the deposition parameters and the properties of the epilayers have been examined using transmission electron microscopy and x-ray rocking curves. Epilayers grown at 6μm/h show an x-ray double-crystal rocking curve full width at half-maximum (FWHM) of 250 arcsec.

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Authors and Affiliations

  1. Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, Beaverum, 97006, Oregon, USA

    N. W. Cody, U. Sudarsan & R. Solanki

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  1. N. W. Cody
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  2. U. Sudarsan
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  3. R. Solanki
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Cody, N.W., Sudarsan, U. & Solanki, R. Ultraviolet photon-induced heteroepitaxy of CdTe on GaAs. Journal of Materials Research 3, 1144–1150 (1988). https://doi.org/10.1557/JMR.1988.1144

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  • DOI: https://doi.org/10.1557/JMR.1988.1144

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