Abstract
The (0001), (1010), and (2110) faces of Bi have been pulsed laser irradiated at 0.5–0.8 J/cm2 with a Q-switched ruby laser. Nomarski interference contrast microscopy, channeling, and selective chemical etching have been used to investigate the response of the material to the laser irradiation. The response of Bi is shown to be strongly orientation dependent. The χmin and half-angle for the Bi (0001) surface have been measured and compared to theoretical values. The Bi(0001) surface has been shown to regrow epitaxially without an increase in the disorder. In contrast, the epitaxial regrowth of the Bi(1010) and Bi(2110) surfaces show a marked increase in disorder after irradiation. The levels of damage show a strong correlation to the critical resolved shear stress characteristics in the particular crystallographic orientation studied.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
L. Buene, E. N. Kaufmann, C. M. Preece, and C. W. Draper, in Laser and Electron-beam Solid Interactions and Materials Processing, edited by J. F. Gibbons, L. D. Hess, and T. W. Sigmon (Elsevier North-Holland, New York, 1981), pp. 591–597.
J. Donohue, The Structure of the Elements (Wiley, New York, 1974), pp. 311–316.
C. Ho, R. Powell, and P. Liley, “Thermal Conductivity of the Elements: A Comprehensive Review,” J. Phys. Chem. Ref. Data 3, Suppl. 1, 79–93 (1974).
A. L. Helms, Jr., C. W. Draper, D. C. Jacobson, J. M. Poate, and S. L. Bernasek, Mater. Res. Soc. Symp. Proc. 35, 439 (1985).
A. L. Helms, Jr., Ph. D. thesis, Princeton University, 1986.
J. Garno, AT&T Bell Laboratories (private communication).
A. G. Cullis, H. C. Webber, and P. Bailey, J. Phys. E 12, 688 (1979).
E. Rimini, in Materials Characterization Using ion Beams, edited by J. P. Thomas and A. Cachard (Plenum, New York, 1978), pp 455–481.
L. C. Lowell, J. H. Wernick, J. Appl. Phys. 30, 234 (1959).
B. R. Appleton and G. Foti, in Ion Beam Handbook for Materials Analysis, edited by J. W. Mayer and E. Rimini (Academic, New York, 1977), pp. 67–107.
M. O. Thompson, G. J. Galvin, J. W. Mayer, P. S. Peercy, J. M. Poate, D. C. Jacobson, A. G. Cullis, and N. G. Chew, Phys. Rev. Lett. 52, 2360 (1984).
A. G. Cullis, H. C. Webber, N. G. Chew, J. M. Poate, and P. Baeri, Phys. Rev. Lett. 49, 219 (1982).
L. Buene, J. M. Poate, D. C. Jacobson, C. W. Draper, and J. K. Hirvonen, Appl. Phys. Lett. 37, 385 (1980).
F. Haessner and W. Seitz, J. Mater. Sei. 6, 16 (1971).
J. O. Porteus, M. J. Soileau, and C. W. Fountain, Appl. Phys. Lett. 29, 156 (1976).
C. D. Marrs, W. N. Faith, J. H. Dancy, and J. O. Porteus, Appl. Opt. 21(22), 4063 (1982).
C. E. Birchenall, Physical Metallurgy (McGraw-Hill, New York, 1959), Chap. 6.
H. M. Musal, Jr., Symposium on Optical Materials for High Power Lasers, Boulder, Colorado (1979).
R. E. Reed-Hill, Physical Metallurgy Principles (Van Nostrand, New York, 1964), pp. 95–129.
S. Otake, H. Namazue, and N. Matsuno, Jpn. J. Appl. Phys. 19, 433 (1980).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Helms, A.L., Draper, C.W., Jacobson, D.C. et al. Epitaxy and defects in laser-irradiated, single-crystal bismuth. Journal of Materials Research 3, 1097–1103 (1988). https://doi.org/10.1557/JMR.1988.1097
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/JMR.1988.1097