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Effects of the band offset on interfacial deep levels

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Abstract

The energy levels of antisite defects at a GaAs/Ge (110) interface are calculated and shown to be essentially unaltered with respect to the GaAs valence band maximum by different choices of the valence band offset.

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Author notes

  1. John D. Dow

    Present address: Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota, 55455, USA

  2. Richard P. Beres

    Present address: Texas Instruments, Richardson, Texas, USA

Authors and Affiliations

  1. Department of Physics, Texas A & M University, College Station, Texas, 77843, USA

    Richard P. Beres & Roland E. Allen

  2. Department of Physics, University of Notre Dame, Notre Dame, Indiana, 46556, USA

    John D. Dow

Authors
  1. Richard P. Beres
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  2. Roland E. Allen
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  3. John D. Dow
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Beres, R.P., Allen, R.E. & Dow, J.D. Effects of the band offset on interfacial deep levels. Journal of Materials Research 3, 164–166 (1988). https://doi.org/10.1557/JMR.1988.0164

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  • DOI: https://doi.org/10.1557/JMR.1988.0164

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