Abstract
Ion-beam mixing of Ti layers with sintered α-SiC and hot-pressed Si3N4 was measured for 1 McV Au+ at doses of 1X1016 cm−2 and 5X1016 cm−2. Rutherford backscattering (RBS) and cross-section transmission electron microscopy (XTEM) were used to evaluate the mixing. Mixing was observed in Ti/SiC system; however, there was no mixing in Ti/Si3N4 system. Results are discussed in light of the enthalpy of mixing criterion for metal-insulator systems.
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Bhattacharya, R.S., Rai, A.K. & Pronko, P.P. High-energy (MeV) ion-beam mixing of Ti with SiC and Si3N4. Journal of Materials Research 2, 211–215 (1987). https://doi.org/10.1557/JMR.1987.0211
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DOI: https://doi.org/10.1557/JMR.1987.0211