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Solid-phase epitaxial regrowth of fine-grain polycrystalline silicon

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Abstract

Fine-grain polycrystalline silicon has been produced by low-energy pulsed-laser irradiation of copper-implanted amorphous silicon. This fine-grained material can be regrown epitaxially on the (100) substrate using thermal annealing at temperatures ranging from 800°–1000 °C.

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Authors and Affiliations

  1. FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ, Amsterdam, The Netherlands

    W. Sinke & F. W. Saris

  2. Department of Materials Science and Engineering, Cornell University, Ithaca, New York, 14853, USA

    J. C. Barbour & J. W. Mayer

Authors
  1. W. Sinke
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  2. F. W. Saris
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  3. J. C. Barbour
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  4. J. W. Mayer
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Sinke, W., Saris, F.W., Barbour, J.C. et al. Solid-phase epitaxial regrowth of fine-grain polycrystalline silicon. Journal of Materials Research 1, 155–161 (1986). https://doi.org/10.1557/JMR.1986.0155

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  • DOI: https://doi.org/10.1557/JMR.1986.0155

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