Laser Diode Facet Degradation Study

MRS Online Proceedings Library volume 798, pages 255–258 (2003)Cite this article

Abstract

We study the degradation behaviour of GaN gain guided laser diodes (LDs) on SiC substrates with cleaved facets and reflective coatings on none, one, or both facets. This allows us to demonstrate that in addition to volume effects there is a contribution of the laser facets to laser degradation. We observe that for the uncoated LDs the threshold current density is increasing considerably faster compared to LDs with mirror coatings. Degradation is observed during operation but not during storage at ambient conditions and thus expected to be photon or current induced. Operation of the uncoated laser in a nitrogen atmosphere reduces the degradation rate with respect to operation in air.

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Affiliations

  1. Angewandte und Experimentelle Physik, Universität Regensburg, 93040, Regensburg, Germany

    Ulrich T. Schwarz & Thomas Schoedl

  2. OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049, Regensburg, Germany

    V. Kümmler, A. Lell & V. Härle

Authors
  1. Ulrich T. Schwarz
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  2. Thomas Schoedl
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  3. V. Kümmler
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  4. A. Lell
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  5. V. Härle
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Correspondence to Ulrich T. Schwarz.

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Schwarz, U.T., Schoedl, T., Kümmler, V. et al. Laser Diode Facet Degradation Study. MRS Online Proceedings Library 798, 255–258 (2003). https://doi.org/10.1557/PROC-798-Y11.10

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