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Si quantum dots for nanoelectronics: From materials to applications

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Abstract

This paper reviews the subject of Si quantum dots embedded in dielectric and its application to the realization of non volatile semiconductor memo¬ries. In the first part of the paper various approaches for the analysis of the materials through transmission electron microscopy (TEM) are critically discussed. The ad¬vantages coming from an innovative application of energy filtered TEM are put in clear evidence. The paper then focuses on the synthesis of the materials: two dif¬ferent methodologies for the realization of the dots, both based on chemical vapor deposition are described in detail, and physical models providing some understand¬ing of the observed phenomenology are reported. We then discuss the application of this nanotechnology to the realization of the storage nodes in non volatile semi¬conductor memories. The following sections describe the electrical characteristics found in the test devices and some key aspects are described in terms of quantita¬tive models. The test devices show several performance advantages, indicating that the approach is an excellent candidate for the realization of Flash memories of the nanoelectronic era.

PACS 73.63. Bd - Nanocrystalline materials.

PACS 73.63.Kv - Quantum dots.

PACS 85.30.-z - Semiconductor devices.

PACS 85.35. -p - Nanoelectronic devices.

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Authors and Affiliations

  1. Consiglio Nazionale delle Ricerche (CNR), Istituto per la Microelettronica e Microsistemi (IMM), Stradale Primosole 50, 95121, Catania, Italy

    S. Lombardo, C. Spinella & E. Rimini

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  1. S. Lombardo
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  2. C. Spinella
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  3. E. Rimini
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Lombardo, S., Spinella, C. & Rimini, E. Si quantum dots for nanoelectronics: From materials to applications. Riv. Nuovo Cim. 28, 1–31 (2005). https://doi.org/10.1393/ncr/i2006-10002-8

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  • DOI: https://doi.org/10.1393/ncr/i2006-10002-8

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