Abstract
In this paper, the impact of laser annealing on the structural, electrical, and optical properties of CuInSe2 (CIS) thin films has been investigated. The films were deposited using a modified flash evaporation system onto glass substrates. Structural analysis using x-ray diffraction (XRD) showed that the films have a strong preferred growth direction in the 〈112〉 plane. After laser annealing with a diffused beam of 20 ns width, the structure was relaxed and an increase in the intensity of 〈112〉 diffraction line was observed. A gas-microphone-type, high-resolution, near-infared (IR) photoacoustic spectrometer was used for the analysis of nonradiative defect states in as-grown and laser-annealed CIS thin film samples at room temperature. The absorption coefficient has been derived from photoacoustic spectra to establish activation energies for several defect-related energy levels. The calculated intrinsic defect ionization energies were also compared with the existing data available in the literature. The changes in the optical properties of the films have been explained in terms of the variations in the structural characteristics within the material.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
U. Rau and H.W. Schock, Practical Handbook of Photovoltaics: Fundamentals and Applications, T. Markvart and L. Castaner, Eds., Elsevier, 2003, p 367–416
A. Zegadi, A. Bouloufa, N. Mazouz, B. Barka, E. Ahmed, R.D. Pilkington, A.E. Hill, and R.D. Tomlinson, Proc. of Photovoltaics (PV) in Europe, Rome, Italy, October 7–11, European Union Joint Research Centre, Brussels, Belgium, 2002, p 83–86
S. Leppavuori, A.E. Hill, J. Levoska, E. Ahmed, R.D. Pilkington, and R.D. Tomlinson, Copper Indium Diselenide Single Crystal and Thin Film Infra-Red Sensors, Sens. Actuators A, 1995, 46–47, p 395–398
L.L. Kazmerski and S. Wagner, Current Topics in Photovoltaics, J. Coutts and D. Meakin, Ed., Academic Press, London, 1985, p 41–109
K. Ramanathan, M.A. Contreras, C.L. Perkins, S. Asher, F.S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, and A. Duda, Properties of 19.2% Efficiency ZnO/CdS/CuInGaSe2 Thin-Film Solar Cells, Prog. Photovolt., 2003, 11, p 225–230
H.G. Swamy, B.S. Naidu, and P.J. Reddy, Structure and Optical Properties of CuGaSe2 Thin Films, Vacuum, 1990, 41, p 1445–1447
J. Levoska, S. Leppavuori, F. Wang, O. Kusmartseva, A.E. Hill, E. Ahmed, R.D. Tomlinson, and R.D. Pilkington, Pulsed Laser Ablation Deposition of CuInSe2 and CuIn1−X Ga X Se2 Thin Films, Phys. Scr., 1994, T54, p 244–247
S. Kohiki, M. Nishitani, K. Nishikura, T. Negami, M. Terauchi, and T. Hirao, Characterization of Molecular Beam Deposited CuInSe2 Thin Films, Thin Solid Films, 1992, 207, p 265–269
J.B. Mooney and R.H. Lamoreaux, Spray Pyrolysis of CuInSe2, Solar Cells, 1986, 16, p 211–220
G.D. Mooney, A.M. Herman, J.R. Tuttle, D.S. Albin, and R. Noufi, Formation of CuInSe2 Thin Films by Rapid Thermal Recrystallization, Appl. Phys. Lett., 1991, 58, p 2678–2680
E. Ahmed, A.E. Hill, R.D. Pilkington, and R.D. Tomlinson, Growth and Annealing of CuIn0.75Ga0.25Se2 Thin Films, J. Phys. D: Appl. Phys., 1993, 26, p 1787–1792
E. Ahmed, A. Zegadi, A.E. Hill, R.D. Pilkington, and R.D. Tomlinson, The Influence of Annealing Processes on the Structural, Compositional and Electro-Optical Properties of CuIn0.75Ga0.25Se2 Thin Films, J. Mater. Sci.: Mater. Electron., 1996, 7, p 213–219
I.W. Boyd, Ed., Laser Processing of Thin Films and Microelectronics, Springer-Verlag, New York, 1987
L.D. Laude, M.C. Joliet, and C. Antoniadas, Laser Induced Synthesis of Thin CuInSe2 Films, Sol Cells, 1986, 16, p 199–209
F.O. Adurodija, M.J. Carter, B. Ghosh, and R. Hill, 12th EC Photovoltaic Solar Energy Conference, Amsterdam, Netherlands, European Union Joint Research Centre, Brussels, Belgium, 1994, p 621–625
E. Ahmed, A.E. Hill, R.D. Pilkington, R.D. Tomlinson, and W. Ahmed, CuIn0.75Ga0.25Se2 Thin Films for Photovoltaic Applications, Proc. 3rd Int. Symposium on Advanced Materials, Pakistan Science Foundation, Islamabad, Pakistan, 1993, p 475–479
A. Zegadi, M.A. Slifkin, and R.D. Tomlinson, A Photoacoustic Spectrometer for Measuring Sub gap Absorption Spectra of Semiconductors, Rev. Sci. Instrum., 1994, 65, p 2238–2243
J.I. Pankove, Optical Processing in Semiconductors, Dover, New York, 1974
A. Zegadi, D.M. Bagnall, A. Belattar, R.D. Pilkington, M.A. Slifkin, A.E. Hill, and R.D. Tomlinson, Photoacoustic Spectroscopy of CuInSe2 Thin Films, Thin Solid Films, 1993, 226, p 248–253
A. Zegadi, M.A. Slifkin, M. Djamin, R.D. Tomlinson, and H. Neumann, Photoacoustic Spectroscopy of Defect States in CuInSe2 Single Crystals, Solid State Commun., 1992, 83, p 587–591
A.L. Li and I. Shih, Majority and Minority Carrier Traps in Monocrystalline CuInSe2, J. Electron. Mater., 1993, 22, p 195–199
M. Igalson and R. Bacewicz, Proc. 11th EC Photovoltaic Solar Energy Conf., Montreux, European Union Joint Research Centre, Brussels, Belgium, 1992, p 874–880
H. Neumann, Verbindungshalbleiter, K. Unger and H.G. Schneider, Ed., Leipzig, 1986, p 392
S. El-Halawany, R. Bacewicz, J. Filipowicz, and R. Trykozko, Phys. Status Solidi A, 1984, 84, p K89-K94
C.X. Qiu and I. Shih, Investigation of Electrodeposited CuInSe2 Films by Admittance Spectroscopy, J. Appl. Phys., 1988, 64, p 758–760
M.A. Slifkin, A. Al-Rahmani, M. Imanieh, R.D. Tomlinson, and H. Neumann, Photoconductivity Spectra of n-type CuInSe2 Crystals, Cryst. Res. Technol., 1991, 26, p 109–113
F. Abou-Elfotouh, H. Moutinho, A. Bakry, T.J. Coutts, and L.L. Kazmerski, Characterization of Defect Levels in Copper, Solar Cells, 1991, 30, p 151–160
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Ahmed, E., Amar, M., Ahmed, W. et al. Laser annealing of flash-evaporated CuInSe2 thin films. J. of Materi Eng and Perform 15, 213–217 (2006). https://doi.org/10.1361/105994906X95904
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1361/105994906X95904