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Solid-liquid equilibria in the silicon-rich corner of the Si-O-C system

  • Basic And Applied Research
  • Published:
Journal of Phase Equilibria

Abstract

A phase diagram is proposed for the solid-liquid equilibria in the silicon-rich corner of the Si-O-C system. It is calculated from the solubility data in binary systems, using the model of a regular solution to estimate the interaction coefficient from existing standard reaction data. The solubility of carbon in solid and liquid solutions saturated with SiC is slightly increased by the effect of oxygen. A similar conclusion holds for the effect of carbon on oxygen solubility in solutions saturated with SiO2. The effect of the third element on the partition coefficient of carbon or of oxygen is negligible. The main result of the proposed diagram is the finding that the solubility can be limited either by SiO2 saturation or by SiC saturation according to the carbon-to-oxygen ratio.

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Authors and Affiliations

  1. EPM-Madylam, CNRS, and INP, Grenoble, France

    Francis Durand & Jean Claude Duby

Authors
  1. Francis Durand
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  2. Jean Claude Duby
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Durand, F., Duby, J.C. Solid-liquid equilibria in the silicon-rich corner of the Si-O-C system. JPE 21, 130 (2000). https://doi.org/10.1361/105497100770340174

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  • DOI: https://doi.org/10.1361/105497100770340174

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