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Analysis of Mg content of Zn1−x Mg x O film grown on sapphire substrates by plasma-assisted molecular beam epitaxy

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Abstract

The Mg content of Zn1−x Mg x O film grown on A-sapphire substrates by plasma-assisted molecular beam epitaxy is measured by inductively coupled plasma (ICP) and electronic probe microanalysis (EPMA). A theoretical model for analyzing the difference in the Mg content between Zn-rich and Zn-deficient conditions in the growth process is established, and the mathematical relation between Mg content and the temperature of the Mg cell is formulated under Zn-rich condition. The formula derived is proven to be correct by experiments.

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Authors and Affiliations

  1. Institute of Lightwave Technology, Beijing Jiaotong University, 100044, Beijing, China

    Yan Fengping & Jian Shuisheng

  2. New Material Research Center, Osaka Institute of Technology, 535-8585, Asahiku, Osaka, Japan

    Yan Fengping, K. Koike, S. Sasa, M. Inoue & M. Yano

  3. Bio Venture Center, Osaka Institute of Technology, 535-8585, Asahiku, Osaka, Japan

    K. Ogata, S. Sasa, M. Inoue & M. Yano

Authors
  1. Yan Fengping
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  2. Jian Shuisheng
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  3. K. Ogata
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  4. K. Koike
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  5. S. Sasa
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  6. M. Inoue
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  7. M. Yano
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Corresponding author

Correspondence to Yan Fengping.

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Yan, F., Jian, S., Ogata, K. et al. Analysis of Mg content of Zn1−x Mg x O film grown on sapphire substrates by plasma-assisted molecular beam epitaxy. Sci. China Ser. E-Technol. Sci. 47, 166–172 (2004). https://doi.org/10.1360/03ye0412

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  • DOI: https://doi.org/10.1360/03ye0412

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