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Dephasing rate in an InAs/GaAs single-electron quantum dot qubit

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Abstract

We have obtained the parameter-phase diagram, which unambiguously defines the parameter region for the use of InAs/GaAs quantum dot as two-level quantum system in quantum computation in the framework of the effective-mass envelope function theory. Moreover, static electric field is found to efficiently prolong decoherence time. As a result, decoherence time may reach the order of magnitude of milli-seconds as external static electric field goes beyond 20 kV/cm if only vacuum fluctuation is taken as the main source for decoherence. Our calculated results are useful for guiding the solid-state implementation of quantum computing.

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Correspondence to Shushen Li.

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Pan, L., Li, S., Liu, J. et al. Dephasing rate in an InAs/GaAs single-electron quantum dot qubit. Sci. China Ser. A-Math. 45, 666–670 (2002). https://doi.org/10.1360/02ys9073

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  • DOI: https://doi.org/10.1360/02ys9073

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