Abstract
Gap and InP nanocrystals were synthesized from Na3P and GaCI3 at low temperature (80–100°C) and atmospheric pressure. The samples were characterized by XRD and TEM measurements. The surface reactivity of Gap nanocrystals was studied by heating in N2. The weight of the nanocrystals increased at the temperature between 370°C and 480°C. It can be concluded that N, molecule was absorbed and reactivated on the surface of Gap nanocrystals. Keywords: gallium phosphide, indium phosphide, nanocrystal, surface reactivity.
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Pan, J., Huang, B., Cui, D. et al. Synthesis and surface reactivity of phosphide nanocrystals. Sci. China Ser. A-Math. 45, 661–665 (2002). https://doi.org/10.1360/02ys9072
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DOI: https://doi.org/10.1360/02ys9072