Abstract
A ferroelectric memory diode that consisted of Au/PZT/BIT/p-Si multilayer configuration was fabricated by pulsed laser deposition (PLD) technique. The reliability issues (I–V characteristics, capacitance retention, fatigue and imprint) were investigated. The I–V curve showed the conventional Schottky diode characteristics with a small current density of −5.3×10−10 A/cm2 at a voltage of −4 V and 6.7×10−8 A/cm2 at a voltage of +4 V, and this characteristic can be maintained below 50°C. The capacitance variety of the ferroelectric diode was only 5% in 10 hours after withdrawing the applied bias of +5 V or −5 V, indicating the diode had good capacitance retention. By applying 100 kHz bipolar pulses of 5 V amplitude, the decay in remanent polarization was only 10% after 109 switching cycles, and meanwhile the increase in coercive field was 12%. After being irradiated for 20 min with a 200 W ultraviolet ray lamp, the remanent polarization and coercive field had both varied, and a voltage shift was observed, but the figure of merit FOM was about 0.2 and the diode had no imprint invalidation.
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Scott, J. F., Araujo, C. A., Ferroelectric Memories, Science, 1989, 246: 1400–1405.
Maderie, P. K., Sanchez, L. E., Wu, S. Y., Ferroelectric switching, memory retention and endurance properties of very thin PZT films, Ferroelectrics, 1991, 116: 65–77.
Ramesh, R., Chan, W. K., Wilkens, B. et al., Fatigue and retention in ferroelectric Y−Ba−Cu−O/Ph−Zr−Ti−O/Y−Ba−Cu−O heterostructures, Applied Physics Letters, 1992, 61(13): 1537–1540.
Sadashivan, S., Agganwal, S., Song, T. K. et al., Evaluation of imprint in fully integrated (La, Sr)CoO3/Pb(Nb,Zr,Ti) O3/(La, Sr)CoO3 ferroelectric capacitors, Journal of Applied Physics, 1998, 83: 2165–2168.
Wu, S. Y., Memory retention and switching behavior of metal-ferroelectric-semiconductor transistors, Ferroelectrics, 1976, 11: 379–382.
Blom, P. W. M., Wolf, R. M., Cillessen, J. F. M. et al., Ferroelectric Schottky diode, Physics Review Letters, 1994, 73(15): 2107–2110.
Gotoh, K., Tamura, H, Takauchi, H. et al., Pt/PZT/n-SrTiO3 ferroelectric memory diode, Japanese Journal of Applied Physics, 1996, 35: 39–43.
Arit, G., Pertsev, N. A., Force constant and effective mass of 90o domain walls in ferroelectric ceramics, Journal of Applied Physics, 1991, 70: 2283–2289.
Duiker, H. M., Beale, P. D., Scott, J. F. et al., Fatigue and switching in ferroelectric memories: Theory and experiment, Journal of Applied Physics, 1990, 68: 5783–5791.
Jiang, Q. Y., Cao, W. W., Cross, L. E., Electric fatigue in lead zirconate titanate ceramics, Journal of the American Ceramic Society, 1994, 77(1): 211–215.
William, L., Warren, B. A., Tuttle, D. D. et al., Imprint in ferroelectric capacitors, Japanese Journal of Applied Physics, 1996 35: 1521–1524.
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Wang, H., Jun, Y., Xiaomin, D. et al. Reliability of Au/PZT/BIT/p-Si ferroelectric diode. Sci. China Ser. E-Technol. Sci. 45, 160–165 (2002). https://doi.org/10.1360/02ye9020
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DOI: https://doi.org/10.1360/02ye9020