Abstract
By applying the specific properties and the fabricating technology of the deep etched elements presented by us, the even device of deep etched binary optics has been designed and fabricated which can be used in quasi-molecule laser exposure system. This even device is light in weight, easy to adjust and has a high utilization rate of energy and is able to project well-distributed light beams. So it is better than the conventional one which was an array made up of quartz sticks. The properties and designed parameters were studied and simulated. The fabricated even was precisely tested by high precision Alpha-Steper. The testing result of the surface relief structures of the even has been profoundly analyzed by introducing “boundary errors”. The theory agrees well with the results of the experiment. This is the first successful application of the deep etched theory and technology of binary optics to the exposure system of microfabrication.
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References
Xu Ping, Tang Jiyue, Guo Lurong et al., Deep etch element of binary optics, Acta Optica Sinica, 1996, 16(12): 1796–1801.
Xu Ping, Tang Jiyue, Guo Lurong et al., Fubrication error simulation of deep etched binary optics. Chinese Journal of Laser, 1997, 24(2): 536–543.
Xu Ping, Tang Jiyue, Guo Lurong et al., Diffraction analysis on deep-etch continuous phase relief microoptics element, Chinese Journal of Laser, 1996, 23(9): 819–823.
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Xu, P., Sun, Y. & Li, J. The even device fabricated by the deep etched binary optics technology for the exposure system of the quasi-molecule laser. Sci. China Ser. E-Technol. Sci. 45, 1–9 (2002). https://doi.org/10.1360/02ye9001
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DOI: https://doi.org/10.1360/02ye9001