Skip to main content
Log in

Structure and stability for (AlN) n + and (AlN) n + (n=1–15) clusters

  • Published:
Science in China Series B: Chemistry Aims and scope Submit manuscript

Abstract

Using density functional theory (DFT) method with 6-31G* basis set, we have carried out the optimizing calculation of geometry, vibrational frequency and thermodynamical stability for (AlN) n + and (AlN) n + (n=1–15) clusters. Moreover, their ionic potential (IP) and electron affinity (EA) were discussed. The results show that the electrical charge condition of the cluster has a relatively great impact on the structure of the cluster and with the increase of n, this kind of impact is reduced gradually. There are no Al-Al and N-N bonds in the stable structure of (AlN) n + or (AlN) n -, and the Al-N bond is the sole bond type. The magic number regularity of (AlN) n + and (AlN) n - is consistent with that for (AlN) n , indicating that the structure with even n such as 2, 4, 6, ... is more stable. In addition, (AlN10 has the maximal ionization power (9.14 eV) and the minimal electron affinity energy (0.19 eV), which manifests that (AlN)10 is more stable than other clusters.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. Wu, H. S., Zhang, C. J., Xu, X. H. et al., The structure and stability for (AlN) n , Science in China, Series B, 2000, 43(6): 634–642.

    Article  CAS  Google Scholar 

  2. Lee, Z. Y., Miao, X. S., Liu, X. J. et al., Kerr effect enhancement and corrosion resistance improvement by AlN and AlSiN films, J. Appl. Phys., 1990, 67(9): 5340–5345.

    Article  Google Scholar 

  3. Rille, E., Zarwaseh, R., Pulker, H. K., Properties of reactively d.c. magnetron-sputtered AlN thin films, Thin Solid Films, 1993, 229: 215–217.

    Article  Google Scholar 

  4. Kim, H. J., Egashira, Y., Komiyama, H., Temperature dependence of the sticking probability and molecular size of the film growth species in an atmospheric chemical vapor deposition process to form AlN AlCl3 and NH3, Appl. Phys. Lett., 1991, 59(20): 2521–2523.

    Article  CAS  Google Scholar 

  5. Egashira, Y., Kim, H. J., Komiyama, H., Cluster size determination in the chemical vapor deposition of aluminum nitride, J. Am. Ceram. Soc., 1994, 77(8): 2009–2016.

    Article  CAS  Google Scholar 

  6. Zheng, L. S., Huang, R. B., The progress of cluster science, National Natural Science Foundation (in Chinese), 1998, 3: 187–189.

    Google Scholar 

  7. Chu, C., Ong, P. P., Chen, H. F. et al., TOF study of pulsed-laser ablation of aluminum nitride for thin film growth, Appl. Surf. Sci., 1999, 137: 9197–9204.

    Article  Google Scholar 

  8. Lynam, M. M., Interrante, L. V., Patterson, C. H. et al., Comparison of isoelectronic aluminum nitrogen and silicon carbon double bonds using valence bond methods, Inorg. Chem., 1991, 30(8): 1918–1922.

    Article  CAS  Google Scholar 

  9. Davy, R. D., Jaffrey, K. J., Aluminum-nitrogen multiple bonds in small AlNH molecules: structures and vibrational frequencies of AlNH2, AlNH3 andAlNH4, J. Phys. Chem., 1994, 98(36): 8930–8936.

    Article  CAS  Google Scholar 

  10. Muller, J., Aminodimethylalane (Me2AlNH2): matrix isolation and ab initio calculations, J. Am. Chem. Soc., 1996, 118: 6370–6376.

    Article  Google Scholar 

  11. Matsunaga, N., Gordon, M. S., Stabilities and energetics of inorganic benzene isomers: prismanes, J. Am. Chem. Soc., 1994, 116: 11407–11419.

    Article  CAS  Google Scholar 

  12. Alexey, Y., Timoshkin, H. F. B., Henry, F. S., The chemical vapor deposition of aluminum nitride: unusual cluster, J. Am. Chem. Soc., 1997, 119: 5668–5679.

    Article  Google Scholar 

  13. Nayak, S. K., Khannas, N., Jena, P., Evolution of bonding in AlnN clusters: A transition from nonmetallic to metallic character, Phys. Rev., 1999, B57(7): 3787–3796.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Wu Haishun.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Wu, H., Xu, X., Zhang, C. et al. Structure and stability for (AlN) n + and (AlN) n + (n=1–15) clusters. Sc. China Ser. B-Chem. 45, 328–336 (2002). https://doi.org/10.1360/02yb9042

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1360/02yb9042

Keywords

Navigation