A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode
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An AlGaN/GaN lateral reverse blocking current regulating diode (RB-CRD) with trench Schottky anode and hybrid trench cathode has been proposed and experimentally demonstrated on silicon substrate. The Schottky barrier diode (SBD) integrated in the anode exhibits a turn-on voltage of 0.7 V and a reverse breakdown voltage of 260 V. The hybrid trench cathode acts as a CRD, which is in series connection with the anode SBD. A knee voltage of 1.3 V and a forward operation voltage beyond 200 V can be achieved for the RB-CRD. The RB-CRD is capable of outputting an excellent steady current in a wide temperature range from 25 to 300 °C. In addition, the forward regulating current exhibits small negative temperature coefficients less than − 0.152%/oC.
KeywordsAlGaN/GaN heterostructure Reverse blocking current regulating diode (RB-CRD) Schottky barrier diode (SBD)
Two-dimensional electron gas
Atomic force microscope
Inductively coupled plasma
Metal organic chemical vapor deposition
Reverse blocking current regulating diode
Schottky barrier diode
Wide bandgap semiconductors have attracted a considerable attention for the next generation of high-power, high-frequency, and high-temperature devices. GaN is one of the most promising wide bandgap semiconductors due to its superior properties such as large bandgap, high electron mobility, and high critical electric field [1, 2, 3, 4, 5]. In addition, due to the combination of spontaneous polarization and piezoelectric polarization, a high-density two-dimensional electron gas (2DEG) can be achieved at the AlGaN/GaN heterointerface. Such excellent properties enable the AlGaN/GaN-based power devices to operate with a low on-resistance while maintaining a high breakdown voltage. GaN-on silicon (GaN-on-Si) platform [6, 7, 8] has been regarded as the most promising technology towards high-performance and low-cost power devices, owing to the availability of large-diameter silicon wafers and the compatibility with the existing-matured CMOS fabrication process. Up to date, a variety of power devices [9, 10, 11, 12, 13, 14, 15, 16] have been demonstrated on AlGaN/GaN-on-Si and some of them are commercially available. At the same time, the development of AlGaN/GaN device with new functionality may expand the application potential of AlGaN/GaN-on-Si, which is beneficial for boosting the extensive commercialization of AlGaN/GaN technology.
Results and Discussion
Figure 3a shows the 3D atomic force microscope (AFM) image of the fabricated cathode trench. The surface roughness of the bottom of the cathode trench is 0.3 nm. Such a small surface roughness is beneficial for the following metal-semiconductor contact. As shown in Fig. 3b, with a 17-nm depth cathode trench recessing, the 8-nm AlGaN barrier layer remains in the cathode trench region. Such a remaining AlGaN barrier layer enables that the 2DEG channel in the cathode trench region is always existing at zero bias.
In conclusion, a novel AlGaN/GaN-on-Si RB-CRD featuring trench Schottky anode and hybrid trench cathode has been successfully demonstrated for the first time. The fabricated RB-CRD exhibits a VK of 1.3 V, a forward operation voltage over 200 V, and a reverse breakdown voltage of 260 V. An excellent accuracy as well as small negative temperature coefficient less than − 0.152%/oC have been obtained for the RB-CRD. The multifunctional RB-CRD with high accuracy is of great potential to be incorporated into emerging GaN power electronics systems.
This work was supported by the National Natural Science Foundation of China (No. 61674024), the Assembly Pre-research Project under Grant JZX2017–1643/Y537, the National Science and Technology Major Project of China (No. 2013ZX02308–005), the Opening project of State Key Laboratory of Electronic Thin Films and Integrated Devices under Grant KFJJ201609, and the Fundamental Research Funds for the Central Universities under Grant ZYGX2016J211.
Availability of Data and Materials
All data generated or analyzed during this study are included in this published article.
AZ conceived and performed the experiments and the data analysis. BZ and QZ supervised this work. All authors discussed the results and contributed to the final manuscript. All authors read and approved the final manuscript.
The authors declare that they have no competing interests.
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