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Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM4Q8

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  • Mott Insulators
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Abstract

The Mott insulator compounds AM4Q8 exhibit a new type of volatile and non volatile resistive switchings that are of interest for RRAM application. We found that above a threshold electric field E TH of the order of a few kV/cm these compounds undergo a volatile resistive switching based on an avalanche process. For electric field much higher than the threshold avalanche breakdown field, the resistive switching turns non volatile. Our EDXS and STEM analyses show that the non volatile resistive switching originating from the avalanche breakdown can neither be ascribed to local chemical modifications nor to a local phase change with symmetry breaking at a resolution better than a few nanometer. This is in strong contrast with non volatile resistive switching reported so far that are all based on chemical or structural changes. Conversely, our results suggest that the avalanche breakdown induce the collapse of the Mott insulating state at the local scale and the formation of a granular conductive filament formed by compressed metallic domains and expanded “superinsulating” domains.

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References

  1. “International technology roadmap for semiconductors” 2011, www.itrs.net

  2. R. Waser, M. Aono, Nat. Mater. 6, 833 (2007)

    Article  ADS  Google Scholar 

  3. M. Rozenberg, Scholarpedia 6, 11414 (2011)

    Article  Google Scholar 

  4. A. Sawa, Materials Today 11, 28 (2008)

    Article  ADS  Google Scholar 

  5. J. Yang, I. Inoue, T. Mikolajick, C. Hwang, MRS Bull. 37, 131 (2012)

    Article  Google Scholar 

  6. J. Yang, D. Strukov, D. Stewart, Nature Nanotechn. 8, 13 (2012)

    Article  ADS  Google Scholar 

  7. Y. Pershin, M. Di Ventra, Adv. Phys. 60, 145 (2011)

    Article  ADS  Google Scholar 

  8. A. Lacaita, D. Wouters, Physica Status Solidi (a) 205, 2281 (2008)

    Article  ADS  Google Scholar 

  9. R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 21, 2632 (2009)

    Article  Google Scholar 

  10. J. Kim, C. Ko, A. Frenzel, S. Ramanathan, J. Hoffman, Appl. Phys. Lett. 96, 213106 (2010)

    Article  ADS  Google Scholar 

  11. A. Zimmers, L. Aigouy, M. Mortier, A. Sharoni, S. Wang, K. West, J. Ramirez, I. Schuller, Phys. Rev. Lett. 110, 056601 (2013)

    Article  ADS  Google Scholar 

  12. T. Driscoll, H. Kim, B. Chae, M. Di Ventra, D. Basov, Appl. Phys. Lett. 95, 043503 (2009)

    Article  ADS  Google Scholar 

  13. M. Qazilbash, M. Brehm, B. Chae, P. Ho, G. Andreev, B. Kim, S. Yun, A. Balatsky, M. Maple, F. Keilmann, et al., Science 318, 1750 (2007)

    Article  ADS  Google Scholar 

  14. R. Waser, Nanoelectronics and Information Technology (Wiley, 2012)

  15. L. Cario, C. Vaju, B. Corraze, V. Guiot, E. Janod, Adv. Mater. 22, 5193 (2010)

    Article  Google Scholar 

  16. V. Guiot, L. Cario, E. Janod, B. Corraze, V.T. Phuoc, M. Rozenberg, P. Stoliar, T. Cren, D. Roditchev, Nature Comm. (2012) (accepted)

  17. C. Vaju, L. Cario, B. Corraze, E. Janod, V. Dubost, T. Cren, D. Roditchev, D. Braithwaite, O. Chauvet, Adv. Mater. 20, 2760 (2008)

    Article  Google Scholar 

  18. C. Vaju, L. Cario, B. Corraze, E. Janod, V. Dubost, T. Cren, D. Roditchev, D. Braithwaite, O. Chauvet, Microelectronic Eng. 85, 2430 (2008)

    Article  Google Scholar 

  19. E. Souchier, L. Cario, B. Corraze, P. Moreau, P. Mazoyer, C. Estournès, R. Retoux, E. Janod, M.-P. Besland, Phys. Status Solidi RRL 5, 53 (2011)

    Article  Google Scholar 

  20. E. Souchier, L. Cario, B. Corraze, C. Estournes, V. Fernandez, T. Skotnicki, P. Mazoyer, E. Janod, M.-P. Besland, Proc. IEEE Int. Memory Workshop IMW ’09, 1 (2009)

  21. E. Souchier, C. Vaju, V. Guiot, B. Corraze, E. Janod, J. Tranchant, P. Mazoyer, M.-P. Besland, L. Cario, Proc. 3rd IEEE Int. Memory Workshop (IMW), 1 (2011)

  22. E. Souchier, M. Besland, J. Tranchant, B. Corraze, P. Moreau, R. Retoux, C. Estournès, P. Mazoyer, L. Cario, E. Janod, Thin Solid Films (2012)

  23. H. Yaich, J. Jegaden, M. Potel, M. Sergent, A. Rastogi, R. Tournier, J. Less Common Metals 102, 9 (1984)

    Article  Google Scholar 

  24. R. Pocha, D. Johrendt, B. Ni, M.M. Abd-Elmeguid, J. Am. Chem. Soc. 127, 8732 (2005)

    Article  Google Scholar 

  25. E. Dorolti, L. Cario, B. Corraze, E. Janod, C. Vaju, H. Koo, E. Kan, M. Whangbo, J. Am. Chem. Soc. 132, 5704 (2010)

    Article  Google Scholar 

  26. C. Vaju, J. Martial, E. Janod, B. Corraze, V. Fernandez, L. Cario, Chem. Mater. 20, 2382 (2008)

    Article  Google Scholar 

  27. V. Ta Phuoc, C. Vaju, B. Corraze, R. Sopracase, A. Perucchi, C. Marini, P. Postorino, M. Chligui, S. Lupi, E. Janod, et al., Phys. Rev. Lett. 110, 037401 (2013)

    Article  ADS  Google Scholar 

  28. M. Abd-Elmeguid, B. Ni, D. Khomskii, R. Pocha, D. Johrendt, X. Wang, K. Syassen, Phys. Rev. Lett. 93, 126403 (2004)

    Article  ADS  Google Scholar 

  29. J.L. Hudgins, G.S. Simin, E. Santi, M.A. Khan, Power Electronics, IEEE Trans. 18, 907 (2003)

    Google Scholar 

  30. J.L. Hudgins, J. Electronic Mater. 32, 471 (2003)

    Article  ADS  Google Scholar 

  31. E. Levinshtein, J. Kostamovaara, S. Vainshtein, Breakdown Phenomena in Semiconductors and Semiconductor Devices (World Scientific, 2005)

  32. J. Tranchant, E. Janod, L. Cario, B. Corraze, E. Souchier, J. Leclercq, P. Cremillieu, P. Moreau, M. Besland, Thin Solid Films (2012) doi:10.1016/j.tsf.2012.10.104

  33. V. Dubost, T. Cren, F. Debontridder, D. Roditchev, C. Vaju, V. Guiot, L. Cario, B. Corraze, E. Janod, arXiv preprint [arXiv:1205.4548] (2012)

  34. V. Dubost, T. Cren, C. Vaju, L. Cario, B. Corraze, E. Janod, F. Debontridder, D. Roditchev, Adv. Funct. Mater. 19, 2800 (2009)

    Article  Google Scholar 

  35. D.B. McWhan, A. Menth, J.P. Remeika, W.F. Brinkman, T.M. Rice, Phys. Rev. B 7, 1920 (1973)

    Article  ADS  Google Scholar 

  36. F. Aurenhammer, ACM Computing Surveys (CSUR) 23, 345 (1991)

    Article  Google Scholar 

  37. M.M.A. Ferrero [arXiv:1105.4246] [cs.CG], (2011)

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Authors and Affiliations

  1. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP. 32229, 44322, Nantes, France

    B. Corraze, E. Janod, L. Cario, P. Moreau, L. Lajaunie, P. Stoliar, V. Guiot, J. Tranchant, S. Salmon, M.-P. Besland & N. Stéphant

  2. Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud, Bât. 510, 91405, Orsay, France

    P. Stoliar & M. Rozenberg

  3. ECyT, Universidad Nacional de San Martín, Irigoyen 3100, 1650, San Martín, Argentina

    P. Stoliar

  4. Institut des Nanosciences de Paris, Université Pierre et Marie Curie, CNRS UMR 7588, 4 place Jussieu, 75005, Paris, France

    V. Dubost, T. Cren & D. Roditchev

  5. GREMAN, CNRS UMR 7347 Université F. Rabelais, UFR Sciences, Parc de Grandmont, 37200, Tours, France

    V. Ta Phuoc

  6. Institut d’Electronique de Microélectronique et de Nanotechnologie, (IEMN), UMR CNRS 8520, Avenue Poincaré, PO Box 60069, 59652, Villeneuve d’Ascq Cedex, France

    D. Troadec

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  1. B. Corraze
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  2. E. Janod
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  3. L. Cario
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Correspondence to B. Corraze or M. Rozenberg.

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Corraze, B., Janod, E., Cario, L. et al. Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM4Q8 . Eur. Phys. J. Spec. Top. 222, 1046–1056 (2013). https://doi.org/10.1140/epjst/e2013-01905-1

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  • DOI: https://doi.org/10.1140/epjst/e2013-01905-1

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