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Effect of surface roughness on multilayer film growth

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Abstract

NbC/Si multilayers grown on silicon substrates of different roughness have been used to study the influence of surface quality on growth characteristics. Surface morphology of substrate and multilayer film are characterized by topographic measurements using atomic force microscopy (AFM) technique and power spectral density analysis (PSD). Grazing incidence x-ray reflectivity (GIXR) technique in combination with PSD analysis reveals a growth characteristic of multilayer film on substrates of different roughness. It is revealed that the stochastic growth of NbC on rough substrate leads to formation of clusters of varying size depending on initial substrate roughness. Details of growth characteristic are discussed.

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Authors and Affiliations

  1. Synchrotron SOLEIL, L’Orme des Merisiers, 91192, Gif-sur-Yvette Cedex, France

    M. H. Modi, M. Thomasset & M. Idir

  2. Raja Ramanna Centre for Advanced Technology, Indore, 452 013, India

    M. H. Modi, S. K. Rai & G. S. Lodha

Authors
  1. M. H. Modi
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  2. S. K. Rai
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  3. M. Thomasset
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  4. G. S. Lodha
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  5. M. Idir
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Correspondence to M. H. Modi.

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Modi, M., Rai, S., Thomasset, M. et al. Effect of surface roughness on multilayer film growth. Eur. Phys. J. Spec. Top. 167, 27–32 (2009). https://doi.org/10.1140/epjst/e2009-00932-9

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  • DOI: https://doi.org/10.1140/epjst/e2009-00932-9

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