The European Physical Journal Special Topics

, Volume 148, Issue 1, pp 15–18

Temperature dependent electron transport in graphene

Article

DOI: 10.1140/epjst/e2007-00221-9

Cite this article as:
Tan, YW., Zhang, Y., Stormer, H. et al. Eur. Phys. J. Spec. Top. (2007) 148: 15. doi:10.1140/epjst/e2007-00221-9

Abstract.

We have investigated the electron transport in graphene at different carrier densities. Single layer graphene was fabricated into Hall bar shaped devices by mechanical extraction onto a silicon oxide/silicon substrate followed by standard microfabrication techniques. From magnetoresistance and Hall measurements, we measure the carrier density and mobility at different gate voltages. Different temperature dependent resistivity behaviors are found in samples with high and low mobilities.

Copyright information

© EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2007

Authors and Affiliations

  1. 1.Department of PhysicsColumbia UniversityNew YorkUSA
  2. 2.Department of Applied Physics and Applied MathematicsColumbia UniversityNew YorkUSA

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