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A physical model of multi-quantum well material applied in the mid-infrared detector

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Abstract

The biggest challenge in 8–12 micron infrared detection is low photon energy and unavoidable thermal noise. Thermo-sensitive photoelectric detection attracts much attention operating at room temperature. This material’s temperature coefficient of resistance (TCR) has become the most critical parameter for the devices. Traditional vanadium oxide and amorphous silicon materials have flaws. However, silicon-based quantum well materials show much promise as a replacement. The research focuses on the quantum well material’s physical model to determine the link between structural factors and TCR. According to the results, the energy level difference can be used as a goal analytical parameter to evaluate the TCR of thin film materials. The energy bands and carrier concentration distributions in equilibrium and non-equilibrium states were discovered via analysis and simulations. The quantum well materials were epitaxial growth, and the pixels used for electric performance tests were fabricated. As the experiments, the TCR of the material around the room temperature is about \(-2.92\)%/K.

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Acknowledgements

This research was funded by National Natural Science Foundation (61805121, 62001223, and 61971466), Jiangsu Natural Science Foundation (BK20170850, BK20190471), China.

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  1. School of Mechanical Engineering, Nanjing University of Science and Technology, Nanjing, China

    Bo Jiang & Yan Su

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  1. Bo Jiang
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  2. Yan Su
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Correspondence to Yan Su.

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Jiang, B., Su, Y. A physical model of multi-quantum well material applied in the mid-infrared detector. Eur. Phys. J. Spec. Top. 231, 659–664 (2022). https://doi.org/10.1140/epjs/s11734-022-00461-5

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  • DOI: https://doi.org/10.1140/epjs/s11734-022-00461-5

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