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Design and implementation of XOR logic circuit based on generalized memristor

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Abstract

This brief proposes a new XOR circuit structure which contains a first-order generalized memristor, a voltage follower and a difference amplifier. The first-order generalized memristor model exhibits different dynamic behaviors with different input voltages. The non-polarity of the generalized memristor is proved through comparative analysis of the mathematical model and physical structure of the generalized memristor. Based on the non-polarity of the generalized memristor, the XOR circuit is designed and implemented using hardware. The influence with respect to the parameters of the generalized memristor on the circuit characteristics is discussed.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant Numbers 61973200, 91848206 and 61801271), Shandong Provincial Natural Science Foundation of China (Grant Number ZR2019BF007), and the Qingdao Science and Technology Plan Project (Grant Number 19-6-2-9-cg), Taishan Scholar Project of Shandong Province of China.

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Authors and Affiliations

  1. Shandong University of Science and Technology, Qingdao, 266590, China

    Fenghu Jiang, Fang Yuan & Yuxia Li

  2. Key Laboratory for Robot and Intelligent Technology of Shandong Province, Qingdao, 266590, China

    Yuxia Li

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  1. Fenghu Jiang
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  2. Fang Yuan
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  3. Yuxia Li
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Correspondence to Yuxia Li.

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Jiang, F., Yuan, F. & Li, Y. Design and implementation of XOR logic circuit based on generalized memristor. Eur. Phys. J. Spec. Top. 231, 481–491 (2022). https://doi.org/10.1140/epjs/s11734-021-00345-0

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  • DOI: https://doi.org/10.1140/epjs/s11734-021-00345-0

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