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Configuration analysis of the quantum well epi-layer in the InGaAs-based near-infrared light-emitting diodes

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Abstract

An Indium Gallium Arsenide (InGaAs)-based-infrared light emitting diodes (lR-LEDs) chip was numerically analyzed based on different quantum wells (QWs) configurations in heterojunction epi-layers for optimal electro-optics performance. The performance analysis is executed based on carrier concentration, radiative recombination, and electroluminescence. Four structures with different QW configurations are optimized for low current injection with high internal quantum efficiency. The carriers in the single quantum well (SQW) configuration are leaked at high operating current density, thus leading to a droop in the efficiency due to the reduced radiative recombination rate. The results show that the carrier confinement increase significantly enhances the radiative recombination rate for a structure with a low band gap of QW. The optimal configuration consists of 3 QWs in the epi layers and emits 900 nm peak wavelength. The findings indicate that the improved carrier confinement in the active region significantly enhances the light intensity of NlR-LED, which is nearly twice as high in 3QWs than in the SQW structure.

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Acknowledgements

This work was supported by CAPTOR and the Department of Physics, International Islamic University Malaysia, in terms of facilities and financially by the Ministry of Education (Malaysia) through Fundamental Research Grant Scheme (Project No.: FRGS 19–033–0641) (References No.: FRGS/1/2018/TK07/UIAM/02/1).

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Authors and Affiliations

  1. Centre for Advanced Optoelectronics Research (CAPTOR), Kulliyyah of Science, International Islamic University Malaysia, 25200, Kuantan, Pahang, Malaysia

    Ahmad Nadzimuddin Nazmi & Ahmad Fakhrurrazi Ahmad Noorden

  2. Department of Physics, Kulliyyah of Science, International Islamic University Islam Malaysia, 25200, Kuantan, Pahang, Malaysia

    Hafizah Noor Isa

  3. Department of Physics, Shiraz University of Technology, Shiraz, Fars, 31371555, Iran

    Mahdi Bahadoran

  4. IIUM Photonics and Quantum Centre (IPQC), Kulliyyah of Science, International Islamic University Malaysia, 25200, Kuantan, Pahang, Malaysia

    Ahmad Nadzimuddin Nazmi & Ahmad Fakhrurrazi Ahmad Noorden

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  1. Ahmad Nadzimuddin Nazmi
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Nazmi, A.N., Ahmad Noorden, A.F., Isa, H.N. et al. Configuration analysis of the quantum well epi-layer in the InGaAs-based near-infrared light-emitting diodes. Eur. Phys. J. Plus 139, 153 (2024). https://doi.org/10.1140/epjp/s13360-024-04948-z

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