Abstract
Identifying the behavior of photoexcited carriers is one method for empirically boosting their transfer efficiencies in doped double quantum dots (DQDs) photocells. The photoexcited carriers transfer qualities were assessed in this study by the output current, power, and output efficiency in the multi-photon absorption process for a doped DQDs photocell, and an optimization technique is theoretically obtained for this proposed photocell model. The results show that some structure parameters caused by doping, such as gaps, incoherent tunneling coupling, and symmetry of structure between two vertically aligned QDs, can remarkably control the photoexcited carriers transfer properties, and that slightly increasing the ambient temperature around room temperature is beneficial to the transfer performance in this doping DQDs photocell model. Thus, our scheme proves a way to optimized strategies for DQDs photocell.
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This manuscript has associated data in a data repository. [Authors’ comment: All data included in this manuscript are available upon resonable request by contacting with the corresponding author.].
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Acknowledgements
S. C. Zhao is grateful for funding from the National Natural Science Foundation of China (Grants 62065009 and 61565008) and Foundation for Personnel training projects of Yunnan Province, China (Grant 2016FB009).
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SCZ conceived the idea. SNZ performed the numerical computations and wrote the draft, and SCZ did the analysis and revised the paper. LJC and QF gave some discussion in the revised version.
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Zhu, SN., Zhao, SC., Chen, LJ. et al. Photoexcited carriers transfer properties in a doped double quantum dots photocell. Eur. Phys. J. Plus 138, 1053 (2023). https://doi.org/10.1140/epjp/s13360-023-04660-4
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DOI: https://doi.org/10.1140/epjp/s13360-023-04660-4