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Laser ablation fabrication of Zn1-xNixO/ZnO heterostructure and valence band offset measurements

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Abstract

ZnNiO and ZnO hetero-interfaces grown by pulsed laser deposition technique have been studied by grazing angle XRD (Gi-XRD), UV–visible spectroscopy, X-ray photoelectron spectroscopy, and valence band spectroscopy. Type-II band alignment (staggered gap) has been observed at ZnNiO and ZnO hetero-interface with conduction band and valence band offset values of − 0.06 eV and 0.15 eV, respectively, for Ni-2p state − 0.22 eV and 0.31 eV, respectively, for Zn-2p state for 3% of Ni doping. For 7% of Ni doping, conduction and valence band offsets of − 0.17 eV and 0.31 eV, respectively, have been obtained for Ni-2p state, − 0.29 eV and 0.43 eV, respectively, for Zn-2p state. The precise calculation of band offsets in ZnNiO and ZnO interface for both Ni-2p and Zn-2p core energy levels will be very helpful in designing and fabricating optoelectronic devices like LEDs, photodetectors.

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Data Availability Statement

This manuscript has associated data in a data repository. [Authors’ comment: The data that support the findings of this study are not openly available but will be made available from the corresponding author on a reasonable request.]

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Acknowledgements

The authors would like to thank Dr. V. Raghavendra Reddy (Scientist), Mr. Anil Gome, Dr. Uday Deshpande, (Scientist), and Mr. Sachin Kumar Dabaray (Jr. Engineer) from University Grant Commission-Department of Atomic Energy, Indore Madhya Pradesh India, for providing characterization facility.

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  1. PMSE Department, Jaypee Institute of Information Technology, Sector 62, Noida, Uttar Pradesh, 201307, India

    Prateek Gupta & B. C. Joshi

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Gupta, P., Joshi, B.C. Laser ablation fabrication of Zn1-xNixO/ZnO heterostructure and valence band offset measurements. Eur. Phys. J. Plus 138, 327 (2023). https://doi.org/10.1140/epjp/s13360-023-03932-3

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