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A modified accelerated testing method of ELDRS in extreme-low dose rate irradiation

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Abstract

Low dose rate radiation induced gain degradation in bipolar devices is considered to be the primary threat to the spacecraft reliability and service life. In order to examine the radiation tolerance of bipolar devices, it is recommended to use 10 m rad(Si)/s as the typical dose rate in the standards MIL-STD-883G. There is lack of solid study to prove the dose rate is sufficient enough low. Our latest experiment results showed that the enhanced low dose rate sensitivity (ELDRS) effects was not saturated at 10 m rad(Si)/s. To examine the reliability of bipolar devices in extreme low dose rate environment below 10 m rad(Si)/s in short time, we proposed a modified accelerated testing method of ELDRS effects in extreme-low dose rate irradiation based on elevated temperature irradiation and temperature-switching during irradiation, which is helpful to get quantified results in the whole low dose rate range.

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Acknowledgements

The authors are indebted to the Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences for the radiation experiment and useful discussions.

Funding

This work was supported by the Science Challenge Project (Grant No. TZ2016003-1) and the National Natural Science Foundation of China (Grant Nos. 11804313 and 11404300).

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Authors and Affiliations

  1. Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China

    Hang Zhou, Yu Song, Yang Liu & Ying Zhang

  2. Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, China

    Hang Zhou, Yu Song, Yang Liu & Ying Zhang

Authors
  1. Hang Zhou
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  2. Yu Song
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  3. Yang Liu
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  4. Ying Zhang
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Correspondence to Ying Zhang.

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Zhou, H., Song, Y., Liu, Y. et al. A modified accelerated testing method of ELDRS in extreme-low dose rate irradiation. Eur. Phys. J. Plus 135, 909 (2020). https://doi.org/10.1140/epjp/s13360-020-00938-z

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